2022
DOI: 10.1039/d2se00459c
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Microwave-assisted surface attachment of aluminium ions on in situ diluted titanium-doped hematite photoanodes for efficient photoelectrochemical water-splitting

Abstract: Al/Ti co-doping was performed through an effective microwave-assisted surface attachment method. The synergistic effect of Al/Ti co-doping and an Al2O3 passivation layer significantly boosts the PEC performance in the Al(5 mM)/Ti(4%):Fe2O3 photoanode.

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Cited by 9 publications
(8 citation statements)
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“…The Sn 3d spectra exhibit a peak centered at 486.4 eV for Sn 3d 5/2 , confirming that the Sn 4+ dopants are diffused from the FTO and incorporated into the hematite lattice (Figure S5b). We can observe that the 8% Nb-HT shows a lower Sn content than the Bare-HT, which might be due to the Nb doping suppressing Sn 4+ ions from being diffused/doped into the crystal lattice. To further investigate the change in the crystal structure of the Nb-doped hematite photoanodes, Raman spectra have been studied.…”
Section: Resultsmentioning
confidence: 89%
“…The Sn 3d spectra exhibit a peak centered at 486.4 eV for Sn 3d 5/2 , confirming that the Sn 4+ dopants are diffused from the FTO and incorporated into the hematite lattice (Figure S5b). We can observe that the 8% Nb-HT shows a lower Sn content than the Bare-HT, which might be due to the Nb doping suppressing Sn 4+ ions from being diffused/doped into the crystal lattice. To further investigate the change in the crystal structure of the Nb-doped hematite photoanodes, Raman spectra have been studied.…”
Section: Resultsmentioning
confidence: 89%
“…This is due to the fact that Be 2+ does not generate Fe 2+ ions within the lattice. 41,42 On the other hand, however, Hf/Be-HT exhibited a higher N D compared to the Hf-HT. This phenomenon can be attributed to the Be 2+ is capable of modulating the effective charge of Fe 3+ to Fe 2+ on Table 1.…”
Section: ■ Results and Discussionmentioning
confidence: 93%
“…Also, the dopant created surface-trapping states, causing the ZF2Q photoanode to exhibit an anodic shift in onset potential. 36 Furthermore, the PD of the TiO 2 underlayered TZF2Q photoanodes was substantially superior to that (1.3 mA cm −2 ) of the F2Q photoanode at 1.23 V RHE . The extrinsic Ti 4+ self-diffusion from the TiO 2 underlayer during high-temperature quenching is responsible for this enhanced PD.…”
Section: Resultsmentioning
confidence: 94%