Microwave annealing for ultra-shallow junction formation

Kohli, Puneet; Ganguly, Swaroop; Kirichenko, Taras A.; Li, H.-J.; Banerjee, Sanjay K.; Graetz, E.; Shevelev, M.

doi:10.1007/s11664-002-0209-1

Cited by 11 publications

(3 citation statements)

References 3 publications

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“…Many studies have proved the advantages of rapid heating. [5][6][7][8][9][10] We have also investigated continuous wave infrared semiconductor laser annealing using a carbon layer as an optical absorption layer. 11,12) The infrared semiconductor laser is attractive for heating processes with high throughput because of its high power, high conversion efficiency, and stable emission.…”

Section: Introductionmentioning

confidence: 99%

Activation of silicon implanted with phosphorus and boron atoms by microwave annealing with carbon powder as a heat source

Hasumi

Nakamura

Yoshidomi

et al. 2014

Jpn. J. Appl. Phys.

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We report the activation of silicon implanted with phosphorus and boron atoms by microwave annealing using carbon powder as a heat source. Silicon substrates were covered with carbon powder and then irradiated with 2.45 GHz microwaves using a commercial microwave oven. Carbon powder effectively absorbs microwaves and heats itself at 1000°C. Silicon substrates are heated by thermal conduction. We carried out implantations of phosphorus atoms at a concentration of 1.0 ' 10 15 cm %2 at 75 keV and boron atoms at a concentration of 1.0 ' 10 15 cm %2 at 25 keV for p-and n-type silicon substrates, respectively. Microwave annealing at 1000 W for 120 s achieved sheet resistivities of 140 and 85 Ω/sq for the phosphorus-and boron-implanted samples, respectively. It also realized the recrystallization of surface amorphized regions caused by implantation. Moreover, low surface recombination velocities of 3.8 ' 10 2 and 2.7 ' 10 2 cm/s were obtained at the top implanted surfaces for the phosphorus-and boron-implanted samples, respectively. Typical diode rectified characteristics and solar cell characteristics with a conversion efficiency of 10.1% were successfully obtained.

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Section: Introductionmentioning

confidence: 99%

Activation of silicon implanted with phosphorus and boron atoms by microwave annealing with carbon powder as a heat source

Hasumi

Nakamura

Yoshidomi

et al. 2014

Jpn. J. Appl. Phys.

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“…19) An earlier work of Thompson et al 20) shows evidence that boron-implanted Si can be heated by microwave irradiation without the use of a susceptor. Kohli et al 21) reported on the effects of hightemperature microwave processing and boron activation in B-/BF 2 -implanted Si.…”

Section: Introductionmentioning

confidence: 99%

Activation of boron and recrystallization in Ge preamorphization implant structure of ultra shallow junctions by microwave annealing

Tsai

Lee

2014

Jpn. J. Appl. Phys.

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In this study, high-current and low-energy (400 eV) ion implantation and low-temperature microwave annealing were employed to achieve ultra shallow junctions. To use the characteristic of microwave annealing more effectively, two-step microwave annealing was also employed. In the first step annealing, a high-power (2400 W; ∼500 °C) microwave was used to achieve solid-state epitaxial regrowth (SPER) and enhance microwave absorption. In the second step of annealing, unlike in conventional thermal annealing, which requires a higher energy to activate the dopant, a 600 W (∼250 °C) microwave was used to achieve low sheet resistance. The device subjected to two-step microwave annealing at 2400 W for 300 s + 600 W for 600 s has the lowest V th. It also has the lowest subthreshold swing (SS), which means that it has the highest cap ability to control sub threshold current. In these three devices, the largest I on/I off ratio is 2.203 × 106, and the smallest I on/I off ratio is 2.024 × 106.

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“…Several groups have reported on the effects of high temperature single frequency microwave processing and boron activation of B and BF 2 implanted silicon [5,6]. Thompson et al have shown that single frequency microwaves repair radiation damage and As activation at temperatures as low as 500 o C [7].…”

Section: Introductionmentioning

confidence: 99%

Variable frequency microwave induced low temperature dopant activation in ion implanted silicon

Alford

Ahmad

Hubbard

2009

2009 17th International Conference on Advanced Thermal Processing of Semiconductors

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Variable frequency microwave (VFM) anneals are used to activate ion implanted dopants and regrow the damaged silicon at temperatures between 500-550 o C. Four-point-probe measurements are used to monitor the extent of dopant activation. Ion channeling analysis reveals that VFM heating removes the Si damage that results from arsenic ion implantation. Transmission electron microscopy demonstrates that the silicon lattice regains nearly all of its crystallinity after mirowave processing. Secondary ion mass spectroscopy reveals limited diffusion of dopants in VFM processed samples when compared to a conventional 900 o C 30 sec rapid thermal anneal.

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Microwave annealing for ultra-shallow junction formation

Cited by 11 publications

References 3 publications

Activation of silicon implanted with phosphorus and boron atoms by microwave annealing with carbon powder as a heat source

Activation of silicon implanted with phosphorus and boron atoms by microwave annealing with carbon powder as a heat source

Activation of boron and recrystallization in Ge preamorphization implant structure of ultra shallow junctions by microwave annealing

Variable frequency microwave induced low temperature dopant activation in ion implanted silicon

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