1998
DOI: 10.1063/1.122241
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Microstructuring of silicon with femtosecond laser pulses

Abstract: We report that silicon surfaces develop an array of sharp conical spikes when irradiated with 500 laser pulses of 100-fs duration, 10-kJ/m2 fluence in 500-Torr SF6 or Cl2. The spikes are up to 40-μm tall, and taper to about 1-μm diam at the tip. Irradiation of silicon surfaces in N2, Ne, or vacuum creates structured surfaces, but does not create sharp conical spikes.

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Cited by 770 publications
(415 citation statements)
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“…The absorptance at wavelength of 1.5 µm of the structured silicon is about 50% that is much higher than that of unstructured silicon substrate. In visible wavelengths part, the absorptance increment is mainly originated from the effect of multiple reflections, i.e., the incident light is reflected multiple times on the micro/ nanostructured surface and is absorbed by the silicon [7][8][9][10][11]. In near-infrared (NIR) region, there is an obvious drop in wavelength around 1.1 μm for the unstructured silicon absorptance curve, which is corresponding to the silicon band gap.…”
Section: Resultsmentioning
confidence: 99%
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“…The absorptance at wavelength of 1.5 µm of the structured silicon is about 50% that is much higher than that of unstructured silicon substrate. In visible wavelengths part, the absorptance increment is mainly originated from the effect of multiple reflections, i.e., the incident light is reflected multiple times on the micro/ nanostructured surface and is absorbed by the silicon [7][8][9][10][11]. In near-infrared (NIR) region, there is an obvious drop in wavelength around 1.1 μm for the unstructured silicon absorptance curve, which is corresponding to the silicon band gap.…”
Section: Resultsmentioning
confidence: 99%
“…After sulfur atoms were doped into the silicon surface, the band gap of silicon was filled with the sulfur impurity energy states. As a result, the absorption for IR light with photon energy less than 1.1 eV can be obtained [3,7]. The IR absorption has potential applications for the IR optoelectronic devices, such as IR image detector.…”
Section: Introductionmentioning
confidence: 93%
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“…Lasers have been widely used in the past to alter the structure of materials and to generate useful structures at small scale and with high accuracy: surface roughness, microfluidic devices or waveguides [36][37][38][39][40] . Here we used a 3D laser engraving technique, which consists of focusing a laser beam at predefined points by using a set of two mirrors and a focusing lens (Fig.…”
Section: Resultsmentioning
confidence: 99%
“…2,3 Silicon, as the most important element in today's semiconductor industry, has drawn a lot of attention from researchers to study both the fundamental response to ultrashort pulsed laser radiation [4][5][6][7] and its potential application in direct laser writing of photonic devices, 2 laser fabrication of nano-tips on thin silicon films, 8,9 direct laser amorphization of silicon, 10,11 and microspiked or black silicon. 12,13 Photonic crystal waveguide slabs are usually made out of silicon-on-insulator (SOI) by electron-beam and x-ray lithography, as well as focused ion beam (FIB) milling. 2 The emergence of femtosecond laser microfabrication makes sub diffraction-limited features directly fabricated on SOI wafer possible.…”
mentioning
confidence: 99%