Microstructures of undercooled germanium

Direct observation of the crystal-growth transition in undercooled silicon

“…The tained that the recalescence interface is indeed the crystalfirst is observation of the morphology of the cross section [1][2][3][4][5] liquid interface. or the surface [5][6][7][8][9][10][11][12][13] of undercooled samples after solidificaSince the vast majority of the liquid solidifies after recation by means of optical microscopy or scanning electron lescence has been completed, information on the morphology microscopy. The second is a measure of the growth rate of the growing crystal in the stage just after recalescence is of crystals using two photodiodes [3,6,10,11] or a high-speed very useful for understanding the solidification behavior of camera.…”

“…to use the first method [1][2][3][4][5][6][7][8][9][10][11][12][13] to obtain the original features of growth during the initial undercooling. The second [12] COMPARING rapid solidification through melt suband third [4,6,[10][11][12] methods can give some information on strate quenching with rapid solidification through highthe solidification behavior of the undercooled sample durnucleation undercooling, the latter has the advantage that it ing the recalescence process.…”

Faceted dendrite growth of silicon from undercooled melt of Si–Ni alloy

“…The growth of a faceted dendrite changes from that of a twin dendrite with a /2 1 1S or /1 1 0S growth direction to that of a /1 0 0S twin-free dendrite with increasing undercooling. The transition from a twin to a twin-free dendrite is examined by microstructure observation of solidified samples [5][6][7][8][10][11][12][13], growth velocity measurement [8], and in situ observation of growing interface morphology [13][14][15][16], although the twin/ twin-free transition is sometimes described as the transition from lateral to continuous growth kinetics in a confusing manner. Battersby et al [8] measured the growth velocity of germanium and iron-doped germanium dendrites and reported that the undercooling dependency of growth velocity was different for twin and twin-free dendrites.…”

“…Thereafter, intensive investigations on faceted dendrite growth of germanium, silicon, and their alloys have been revived for clarifying the transition of growth kinetics. In most experiments germanium or silicon was undercooled using the glass flux technique [4][5][6][7][8] or electromagnetic levitation technique [9][10][11][12][13][14][15][16] and the crystallographic morphology of solidified crystals was examined. The growth velocity of faceted dendrites was also measured for germanium, silicon, and their alloys [8][9][10][11][12][13][14][15][16].…”

Faceted Crystal Growth of Silicon from Undercooled Melt of Si-20 mass%Ni Alloy

“…2,3) Because of the rapid progress of silicon wafer production technology the interest in faceted dendrite growth was subsided for many years until Devaud and Turnbull 4) found a twin-free dendrite in the late 1980s. Thereafter, intensive investigations on faceted free dendrite growth of germanium, silicon, and their alloys were carried out using the glass flux technique [4][5][6][7][8] or electromagnetic levitation technique [9][10][11][12][13][14][15][16] and the crystallographic morphology of solidified crystals was examined. The growth velocity of faceted dendrites was also measured for germanium, silicon, and their alloys [8][9][10][11][12][13][14][15][16] and the measured growth velocity was analyzed using an analytical dendrite model termed such as the BCT model 17) or the LKT model.…”