Microstructures and electrical properties of Nd3+/V5+-cosubstituted Bi4Ti3O12 thin films

Zhong, Xiangli; Hu, Zheng; Wang, J.B.; Liao, Hank; Zhou, Yue

doi:10.1016/j.jcrysgro.2008.07.082

Cited by 5 publications

(2 citation statements)

References 14 publications

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“…Furthermore, the co-substitution at A- and B-sites in BIT films has been proved to be the most effective to enhance their polarization and reduce their leakage current. For example, Nd 3+ /V 5+ , La 3+ /Mn 3+ , Pr 3+ /Nb 5+ , Nd 3+ /Zr 4+ co-substituted BIT thin films have been proved to exhibit the better ferroelectric properties compared with the corresponding mono-substituted BIT counterparts 18–21 . Although Nd 3+ or Hf 4+ mono-substituted BIT materials has been well investigated, to our knowledge, the Nd 3+ /Hf 4+ co-substituted BIT thin film has not been prepared and studied.…”

Section: Introductionmentioning

confidence: 99%

Integration of c-axis oriented Bi3.15Nd0.85Ti2.95Hf0.05O12/La0.67Sr0.33MnO3 ferromagnetic-ferroelectric composite film on Si substrate

Duan

Cui

Zhao

et al. 2017

Sci Rep

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A La0.67Sr0.33MnO3 (LSMO) ferromagnetic layer and a Nd3+/Hf4+ co-substituted Bi4Ti3O12 (Bi3.15Nd0.85Ti3-xHfxO12 (BNTHx, x = 0, 0.025, 0.05, 0.1 and 0.15)) ferroelectric layer were successively deposited onto the (00 l)-oriented LaNiO3 (LNO) layer buffered (001) Si substrate via all chemical solution deposition (CSD) method. As a result, the BNTHx/LSMO ferromagnetic-ferroelectric composite films integrated on Si substrate exhibit high c-axis orientation. The Nd3+/Hf4+ co-substituted BNTHx films have the lower leakage current and the better ferroelectric properties than the mono-substituted Bi4Ti3O12 (Bi3.15Nd0.85Ti3O12 and Bi4Ti2.95Hf0.05O12) films. In particular, the BNTH0.05/LSMO/LNO film has the lowest leakage current density of 2.5 × 10−7 A/cm2 at 200 kV/cm, and the highest remnant polarization (Pr) of 27.3 μC/cm2. The BNTH0.05/LSMO/LNO composite film also exhibits the soft ferromagnetism characteristics with a high saturated magnetization of 258 emu/cm3 at 300 K, and the excellent magnetoelectric (ME) effect. The variations of ME voltage coefficient α E values with DC bias magnetic field H bias shows that the BNTH0.05/LSMO/LNO film has the high α E value at near zero H bias. Moreover, at H bias = 0 Oe, the α E value gradually increases from zero with the increasing of the AC magnetic field frequency, and eventually reaches about 18.9 V/cm·Oe at 100 kHz, suggesting the existence of self-biased ME effect.

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Section: Introductionmentioning

confidence: 99%

Integration of c-axis oriented Bi3.15Nd0.85Ti2.95Hf0.05O12/La0.67Sr0.33MnO3 ferromagnetic-ferroelectric composite film on Si substrate

Duan

Cui

Zhao

et al. 2017

Sci Rep

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“…This paper describes the preparation of Ce-substituted thin films on Pt/TiO 2 /SiO 2 /Si substrates by the sol-gel method. The influences of doping content on structures, and the properties of ferroelectricity [11] , especially the influence on phase, residual polarization and coercive electric field were investigated in our research. 4 5.2 ml mixed with ethylene glycol monomethyl ether and acetylacetone 10 ml during constant stirring at room temperature for 15 min, then solution B was slowly added to solution A at the speed of one drop every second.…”

Section: Introductionmentioning

confidence: 99%

Morphology and ferroelectric properties of Ce-substituted Bi₄ Ti₃ O₁₂ thin films prepared by sol-gel method

Li¹,

Zhang

2014

Science and Engineering of Composite Materials

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The Ce-substituted bismuth titanate (Bi 4 Ti 3 O 12 ) ferroelectric thin films were prepared on Pt/Ti/SiO 2 /Si substrates by sol-gel method and annealed at 700 ° C. The Bi-layered perovskite (with Ce substitution for Bi) single phase films were obtained and the thickness was 500 nm. At 12 V amplitude and 1000 Hz frequency, ferroelectric tests results showed a hysteresis loop with remnant polarization (2Pr) and coercive field values (2Ec) of 9.86 μ C/cm 2 and 208 kV/cm, respectively. The structure and lattice parameters were analyzed by X-ray diffraction (XRD). The results showed that by increasing Ce substitution the ratio of a/c, the ferroelectric properties, increased when the Ce-substitution of 0.6, a and c values were 5.40734 Å and 5.3559 Å , respectively. The a-axis highly oriented structure may have influenced the remnant polarization and coercive field values of the films obtained.

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Growth and characterization of Bi 3.15 Nd 0.85 Ti 2.95 Hf 0.05 O 12 /La 0.67 Sr 0.33 MnO 3 composite film with strong magnetoelectric effect by chemical solution deposition under moderate crystallization temperature

Duan

Zhu

Cui

et al. 2018

Journal of Alloys and Compounds

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Microstructures and electrical properties of Nd3+/V5+-cosubstituted Bi4Ti3O12 thin films

Cited by 5 publications

References 14 publications

Integration of c-axis oriented Bi3.15Nd0.85Ti2.95Hf0.05O12/La0.67Sr0.33MnO3 ferromagnetic-ferroelectric composite film on Si substrate

Integration of c-axis oriented Bi3.15Nd0.85Ti2.95Hf0.05O12/La0.67Sr0.33MnO3 ferromagnetic-ferroelectric composite film on Si substrate

Morphology and ferroelectric properties of Ce-substituted Bi₄ Ti₃ O₁₂ thin films prepared by sol-gel method

Growth and characterization of Bi 3.15 Nd 0.85 Ti 2.95 Hf 0.05 O 12 /La 0.67 Sr 0.33 MnO 3 composite film with strong magnetoelectric effect by chemical solution deposition under moderate crystallization temperature

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Microstructures and electrical properties of Nd3+/V5+-cosubstituted Bi4Ti3O12 thin films

Cited by 5 publications

References 14 publications

Integration of c-axis oriented Bi3.15Nd0.85Ti2.95Hf0.05O12/La0.67Sr0.33MnO3 ferromagnetic-ferroelectric composite film on Si substrate

Integration of c-axis oriented Bi3.15Nd0.85Ti2.95Hf0.05O12/La0.67Sr0.33MnO3 ferromagnetic-ferroelectric composite film on Si substrate

Morphology and ferroelectric properties of Ce-substituted Bi4 Ti3 O12 thin films prepared by sol-gel method

Growth and characterization of Bi 3.15 Nd 0.85 Ti 2.95 Hf 0.05 O 12 /La 0.67 Sr 0.33 MnO 3 composite film with strong magnetoelectric effect by chemical solution deposition under moderate crystallization temperature

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Morphology and ferroelectric properties of Ce-substituted Bi₄ Ti₃ O₁₂ thin films prepared by sol-gel method