2015
DOI: 10.4071/isom-2015-wp43
|View full text |Cite
|
Sign up to set email alerts
|

Microstructure of Transient Liquid Phase Sintering Joint by Sn-Coated Cu Particles for High Temperature Packaging

Abstract: We develop a transient liquid phase sinter (TLPS) bonding using Sn-coated Cu micro-sized particles. With this bonding process, a thermally stable joint comprising Cu3Sn phase and a dispersion of ductile Cu particles can be obtained. The particle paste, which contained Cu particles with a thin Sn coating and terpineol, was used to join Cu substrates. The setup was bonded at 300 °C for 30s under an applied pressure of 10 MPa using a thermo-compression bonding system under a formic acid gas atmosphere for reducin… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3

Citation Types

0
3
0

Year Published

2017
2017
2019
2019

Publication Types

Select...
2
1

Relationship

0
3

Authors

Journals

citations
Cited by 3 publications
(3 citation statements)
references
References 8 publications
0
3
0
Order By: Relevance
“…As the advancement in the electronic era proceeds, power devices are finding their scope in automotive, aerospace, and electronics industries. In recent years, the incorporation of new semiconductor materials like SiC, GaAs, Si 3 N 4 , and AlN in power devices demands stable interconnects with high operating temperatures (>250 • C) [1]. Therefore, the conventional low melting point solders such as Sn-Pb, SnAgCu, and Sn-Bi cannot be used for power electronic devices [2].…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…As the advancement in the electronic era proceeds, power devices are finding their scope in automotive, aerospace, and electronics industries. In recent years, the incorporation of new semiconductor materials like SiC, GaAs, Si 3 N 4 , and AlN in power devices demands stable interconnects with high operating temperatures (>250 • C) [1]. Therefore, the conventional low melting point solders such as Sn-Pb, SnAgCu, and Sn-Bi cannot be used for power electronic devices [2].…”
Section: Introductionmentioning
confidence: 99%
“…Currently, these power devices are interconnected using thermo-compression joining [3], high temperature soldering [4], and nano Ag paste sintering [5]. However, the major drawbacks in these methods are (1) high joining temperature, which enhances the interface diffusion; (2) high applied pressure, which damages the semiconductor substrates; and (3) high manufacturing cost.…”
Section: Introductionmentioning
confidence: 99%
“…This decouples the process completion time from the joint thickness, because the required IMC thickness is equal to the short distance between high-melting temperature particles. Because of these advantages, considerable research has been pursued on the Cu-Sn [14][15][16][17][18][19][20][21][22] and Ni-Sn [18,[23][24][25][26][27] material systems in the last years.…”
Section: Introductionmentioning
confidence: 99%