Microstructure of Magnetron Sputtered Amorphous SiO_x Films: Formation of Amorphous Si Core−Shell Nanoclusters

Abstract

The microstructures of the as-sputtered amorphous silicon-rich oxide (SiO x ) films were investigated by using a combination of X-ray photoelectron spectroscopy (XPS) and Raman microscopy. XPS analysis reveals that the as-sputtered amorphous SiO x films are chemically inhomogeneous. Raman spectra and valence band XPS spectra suggest the formation of amorphous Si nanoclusters in the as-sputtered amorphous SiO x films. The size of these nanoclusters depends on the Si concentration in the films. The formation of amorphous Si nanoclusters was attributed to the high kinetic energy and surface migration of the sputtered Si atoms. It is found that the as-sputtered amorphous SiO x films have a complex structure consisting nanoscale cluster of amorphous Si core with suboxides shell embedded in the amorphous SiO2 matrix.

Photoelectrochemical Hydrogen Evolution and CO2 Reduction over MoS2/Si and MoSe2/Si Nanostructures by Combined Photoelectrochemical Deposition and Rapid-Thermal Annealing Process

“…Raman spectra ( Figure 2) were obtained to examine the detailed crystal phase formation for the catalyst systems. For all the samples, the strongest peak was commonly observed at 524 cm −1 (not shown in the Figure), attributed to Si used as a support [37]. A weak peak at~300 cm −1 for MoO x /Si was due to the phonon mode of Si [37].…”

“…For all the samples, the strongest peak was commonly observed at 524 cm −1 (not shown in the Figure), attributed to Si used as a support [37]. A weak peak at~300 cm −1 for MoO x /Si was due to the phonon mode of Si [37]. No Raman peaks of Mo oxides were observed, indicating that the as-photoelectrodeposited sample was ultrathin and/or amorphous.…”

A facile method to synthesise unique Si nanostructure materials by non‐through‐hole anodic alumina templating

“…There are two obvious bands centered at~480 cm À1 and~160 cm À1 , which are the characteristic peaks amorphous Si. [18,19] Raman peak located at~520 cm À1 and the weak peak at~300 cm À1 for crystalline Si have been reported. [20] The absence of SiO 2 signals reveals that it is possible that SiO 2 couldn't be formed at this conditions or the quantity is too low to give rise to detectable Raman signals.…”

“…Figure (a) shows the Raman spectra of the Si material. There are two obvious bands centered at ~480 cm −1 and ~160 cm −1 , which are the characteristic peaks amorphous Si . Raman peak located at ~520 cm −1 and the weak peak at ~300 cm −1 for crystalline Si have been reported .…”

Study of Silicon Dioxide Nanowires Grown via Rapid Thermal Annealing of Sputtered Amorphous Carbon Films Doped with Si

“…Before RTA, there are silicon bonds Si 2+ , Si 3+ , Si 4+ in the film. However, after RTA, all silicon bonds have been completely converted to Si 4+ , [21][22][23][24] indicating silicon in a-C:Si/Ni film has been totally oxidized into silicon dioxide. The deconvoluted C 1s XPS peaks for the asdeposited and post-RTA a-C:Si/Ni films are demonstrated in Figure 6(b).…”