Microstructure of Group III‐N Nanowires

Trampert, A.; Kong, Xiang-Shan; Luna, E.; Grandal, J.; Jenichen, B.

doi:10.1002/9781118984321.ch6

Cited by 2 publications

(2 citation statements)

References 44 publications

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“…Instead, the SAG nanowalls on N-AlGaSL-2 have a granular structure with a relatively large void fraction. A similar granularity is evident in the surface topography of the underlying buffer, visible between the Preferential formation of m-plane facets has also been reported for self-assembled GaN NWs [41,42], for Ga-polar SAG GaN nanowires grown by PAMBE [22], and it was observed for the N-polar SAG NWs in this study. Although the patterned apertures on all samples were round, as the NWs grew vertically they also expanded laterally to form m-plane sidewall facets (see Figure 1f).…”

Section: Resultssupporting

confidence: 88%

Selective Area Growth and Structural Characterization of GaN Nanostructures on Si(111) Substrates

et al. 2018

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Selective area growth (SAG) of GaN nanowires and nanowalls on Si(111) substrates with AlN and GaN buffer layers grown by plasma-assisted molecular beam epitaxy was studied. For N-polar samples filling of SAG features increased with decreasing lattice mismatch between the SAG and buffer. Defects related to Al–Si eutectic formation were observed in all samples, irrespective of lattice mismatch and buffer layer polarity. Eutectic related defects in the Si surface caused voids in N-polar samples, but not in metal-polar samples. Likewise, inversion domains were present in N-polar, but not metal-polar samples. The morphology of Ga-polar GaN SAG on nitride buffered Si(111) was similar to that of homoepitaxial GaN SAG.

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Section: Resultssupporting

confidence: 88%

Selective Area Growth and Structural Characterization of GaN Nanostructures on Si(111) Substrates

et al. 2018

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“…As long as the one-dimensional (1D) nanostructures reflect a high symmetry with respect to the substrate and along the growth direction, standard plan-view and cross-sectional TEM investigations are sufficiently applicable. 8 On the other hand, a higher complexity in the NC geometry as well as in the internal structure demands a more complete three-dimensional structural and chemical information that cannot be extracted from various TEM projections only. Here, electron tomography has been recently applied to measure for instance the variations in surface morphology 9,10 or the three-dimensional distribution of the electrostatic potential in III-V nanowires.…”

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confidence: 99%

Electron tomography of (In,Ga)N insertions in GaN nanocolumns grown on semi-polar (112̄2) GaN templates

et al. 2015

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We present results of scanning transmission electron tomography on GaN/(In,Ga)N/GaN nanocolumns (NCs) that grew uniformly inclined towards the patterned, semi-polar GaN(112̄2) substrate surface by molecular beam epitaxy. For the practical realization of the tomographic experiment, the nanocolumn axis has been aligned parallel to the rotation axis of the electron microscope goniometer. The tomographic reconstruction allows for the determination of the three-dimensional indium distribution inside the nanocolumns. This distribution is strongly interrelated with the nanocolumn morphology and faceting. The (In,Ga)N layer thickness and the indium concentration differ between crystallographically equivalent and non-equivalent facets. The largest thickness and the highest indium concentration are found at the nanocolumn apex parallel to the basal planes.

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Microstructure of Group III‐N Nanowires

Cited by 2 publications

References 44 publications

Selective Area Growth and Structural Characterization of GaN Nanostructures on Si(111) Substrates

Selective Area Growth and Structural Characterization of GaN Nanostructures on Si(111) Substrates

Electron tomography of (In,Ga)N insertions in GaN nanocolumns grown on semi-polar (112̄2) GaN templates

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