Microstructure of epitaxial lateral overgrown AlN on trench-patterned AlN template by high-temperature metal-organic vapor phase epitaxy

Imura, Masataka; Nakano, Koji; Kitano, Tsukasa; Fujimoto, Naoki; Narita, G.; Okada, Narihito; Balakrishnan, Kalpana; Iwaya, Motoaki; Kamiyama, Satoshi; Amano, Hiroshi; Akasaki, Isamu; Shimono, Kenji; Noro, T.; Takagi, T.; Bandoh, Akira

doi:10.1063/1.2364460

Cited by 85 publications

(54 citation statements)

References 7 publications

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“…However, the growth of high-quality AlN is extremely difficult owing to the weak surface migration of Al adatoms. Some methods, such as maskless epitaxial lateral overgrowth (ELO) [1], the use of patterned AlN as a template [2], NH 3 pulse-flow growth [3], and modified MEE (migration-enhanced epitaxy) [4] have been proven to be effective in decreasing the threading dislocation density, particularly that of the edge type, and improving the crystalline quality. Control of the nucleation layer (buffer layer, medium temperature-(MT-) AlN) is very important for AlN growth, as can be inferred, even from above methods [5].…”

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confidence: 99%

Control of AlN buffer/sapphire substrate interface for AlN growth

Miyagawa

Yang

Miyake

et al. 2011

Phys. Status Solidi C

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The growth condition of AlN buffer layer has been studied in order to fabricate a high‐quality AlN layer on a sapphire substrate. The growth of high‐quality AlN is extremely difficult due to the weak surface migration of Al adatoms. Therefore we have focused on the AlN buffer layer, and examined the growth condition while controlling the thickness and growth temperature. The crystalline quality of the AlN layer grown on an AlN buffer layer at a growth temperature of 1250 °C was improved, and the full width at half‐maximum (FWHM) value of the X‐ray rocking curve (XRC) obtained for (0002) and (10‐10) diffractions were 138 and 464 arcsec, respectively. Moreover, AlOxN1‐x was formed when the AlN buffer layer was grown at a high temperature (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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confidence: 99%

Control of AlN buffer/sapphire substrate interface for AlN growth

Miyagawa

Yang

Miyake

et al. 2011

Phys. Status Solidi C

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“…5,6) To prevent the generation of threading dislocations in the AlN epitaxial layer, the nucleation layer has been controlled. [7][8][9][10][11][12] However, the AlN crystal quality can still be improved by optimizing the nucleation conditions.…”

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confidence: 99%

Annealing of an AlN buffer layer in N₂–CO for growth of a high-quality AlN film on sapphire

Miyake

Nishio

Suzuki

et al. 2016

Appl. Phys. Express

171

115

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The annealing of an AlN buffer layer in a carbon-saturated N 2 -CO gas on a sapphire substrate was investigated. The crystal quality of the buffer layer was significantly improved by annealing at 1650-1700°C. An AlN buffer layer with a thickness of 300 nm was grown by metalorganic vapor phase epitaxy (MOVPE), and was annealed at 1700°C for 1 h. We fabricated a 2-µm-thick AlN layer on the annealed AlN buffer layer by MOVPE. The full widths at half maximum of the (0002)-and (10 12)-plane X-ray rocking curves were 16 and 154 arcsec, respectively, and the threading dislocation density was 4.7 ' 10 8 cm %2 .

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“…The reduction of the threading dislocation (TD) density of AlGaN on AlN was observed when the thickness of AlGaN was increased. At the same time, it was also observed that Al 0.5 Ga 0.5 N on AlN still had the highest TD density, indicating that merely increasing the thickness is not very effective for reducing the TD density of Al 0.5 Ga 0.5 N. A further decrease in TD density can be achieved by using a grooved AlN template [2,3]. However, an additional etching process is necessary, and the growth of Al 0.5 Ga 0.5 N on the grooved AlN template might be complicated.…”

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confidence: 86%

Microstructural analysis of thick AlGaN epilayers using Mg‐doped AlN underlying layer

Nonaka¹,

Asai²,

Ban³

et al. 2011

Phys. Status Solidi C

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This paper reports the microstructural analysis of 20‐μm‐thick Al0.5Ga0.5N with improved crystalline quality owing to the use of a Mg‐doped AlN underlying layer. The threading dislocation density in 20‐μm‐thick Al0.5Ga0.5N on Mg‐doped AlN was 8.6×108cm‐2, which is about one‐fifth lower than that of Al0.5Ga0.5N on an undoped AlN underlying layer. The microstructural analysis was carried out to clarify dislocation behaviours in the Al0.5Ga0.5N layer on the Mg‐doped AlN underlying layer. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Microstructure of epitaxial lateral overgrown AlN on trench-patterned AlN template by high-temperature metal-organic vapor phase epitaxy

Cited by 85 publications

References 7 publications

Control of AlN buffer/sapphire substrate interface for AlN growth

Control of AlN buffer/sapphire substrate interface for AlN growth

Annealing of an AlN buffer layer in N₂–CO for growth of a high-quality AlN film on sapphire

Microstructural analysis of thick AlGaN epilayers using Mg‐doped AlN underlying layer

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Microstructure of epitaxial lateral overgrown AlN on trench-patterned AlN template by high-temperature metal-organic vapor phase epitaxy

Cited by 85 publications

References 7 publications

Control of AlN buffer/sapphire substrate interface for AlN growth

Control of AlN buffer/sapphire substrate interface for AlN growth

Annealing of an AlN buffer layer in N2–CO for growth of a high-quality AlN film on sapphire

Microstructural analysis of thick AlGaN epilayers using Mg‐doped AlN underlying layer

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Annealing of an AlN buffer layer in N₂–CO for growth of a high-quality AlN film on sapphire