1993
DOI: 10.1016/0921-5093(93)90725-t
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Microstructure of chemically vapour codeposited SiCTiCC nanocomposites

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Cited by 22 publications
(10 citation statements)
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“…One can see that the carbon band dominates the spectra even at the composition close to the SiC stoichiometry. The reason is probably that the scattering efficiency of the C-C bond is approximately 40 times higher than that of the Si-C bond [19]. The formation of the crystalline SiC structure at the deposition temperature of ∼750°C is indicated also by Raman spectra.…”
Section: Structure Of Sic Filmsmentioning
confidence: 97%
“…One can see that the carbon band dominates the spectra even at the composition close to the SiC stoichiometry. The reason is probably that the scattering efficiency of the C-C bond is approximately 40 times higher than that of the Si-C bond [19]. The formation of the crystalline SiC structure at the deposition temperature of ∼750°C is indicated also by Raman spectra.…”
Section: Structure Of Sic Filmsmentioning
confidence: 97%
“…It should be noted that the film deposited at N 2 /Ar = 0 possesses a small excess of carbon (Si 0.47 C 0.53 ). The higher intensity of carbon band in comparison to Si-Si and Si-C is a result of the higher Raman polarizability of the C-C bond [45].…”
Section: Raman Spectramentioning
confidence: 96%
“…For example, SiC-TiC composites have been fabricated by SPS of a mixture of ␤-SiC and TiC powders without additive at 1800 • C. 6 There have also been several studies on in situ fabrication of SiC-TiC composites by chemical vapor deposition (CVD) to produce fine homogeneous composite particles of high purity. [11][12][13][14][15][16] For example, Kawai et al fabricated SiC-TiC ceramics by CVD using a gas mixture of SiCl 4 , TiCl 4 and hydrocarbon. 11 A French group used SiH 2 Cl 2 instead of SiCl 4 as a precursor for the CVD deposition of nanocomposite SiC-TiC-C on carbon substrate.…”
Section: Introductionmentioning
confidence: 99%
“…11 A French group used SiH 2 Cl 2 instead of SiCl 4 as a precursor for the CVD deposition of nanocomposite SiC-TiC-C on carbon substrate. 14,15 Thus, the CVD method can produce fine particles of SiC and/or TiC from gas mixtures at relatively low temperatures (1000-1600 • C). In addition to the fabrication of SiC-TiC composites, layered SiC/TiC ceramics with graded compositions have been fabricated with good mechanical properties.…”
Section: Introductionmentioning
confidence: 99%