2019
DOI: 10.1016/j.vacuum.2019.03.057
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Microstructure, morphology, wettability and mechanical properties of Ho2O3 films prepared by glancing angle deposition

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Cited by 5 publications
(3 citation statements)
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“…18,45 Fig. 3(e) shows the Ho 4d XPS spectrum containing a low-intensity peak at 159.4 eV, consistent with Ho-Ho bonds, and a peak at a binding energy 161.8 eV, consistent with Ho-O bonds, 31,40,46 indicating that Ho was doped into the lattice by replacing Ti.…”
Section: X-ray Photoelectron Spectroscopy Analysismentioning
confidence: 92%
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“…18,45 Fig. 3(e) shows the Ho 4d XPS spectrum containing a low-intensity peak at 159.4 eV, consistent with Ho-Ho bonds, and a peak at a binding energy 161.8 eV, consistent with Ho-O bonds, 31,40,46 indicating that Ho was doped into the lattice by replacing Ti.…”
Section: X-ray Photoelectron Spectroscopy Analysismentioning
confidence: 92%
“…3(c)), the peak at 530.79 eV corresponds to Ho-O-Ti, 37 and that at 530.04 eV corresponds to the Ti-O bond of TiO 2 . 37,38 Furthermore, the peaks at 531.64, 532.48, and 533.48 eV correspond to CQO, 39 C-O, 40 and O-CQO, 39 respectively. Fig.…”
Section: X-ray Photoelectron Spectroscopy Analysismentioning
confidence: 99%
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