Microstructure evolution with RTA temperature in nano-thick (Ru or Au)-inserted nickel silicides

Yoon, Kijeong; Song, Ohsung

doi:10.1016/j.jcrysgro.2008.09.096

Cited by 2 publications

(2 citation statements)

References 17 publications

(15 reference statements)

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“…It should be mentioned that we have considered formation of Au silicide, which has been reported in the literature to be formed at elevated temperatures, even below 500 °C. However, Au silicide is likely present in minor quantities, and is reported to have only a small effect on electrical conductance [7].…”

Section: Resultsmentioning

confidence: 99%

Characterization of opto-electrical enhancement of tandem photoelectrochemical cells by using photoconductive-AFM

et al. 2017

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Solar-to-hydrogen conversion by water splitting in photoelectrochemical cells (PECs) is a promising approach to alleviate problems associated with intermittency in solar energy supply and demand. Several interfacial resistances in photoelectrodes limit the performance of such cells, while the properties of interfaces are not easy to analyze in situ. We applied photoconductive-AFM to analyze the performance of WO/pn Si photoanodes, containing an ultra-thin metal interface of either Au or Pt. The Au interface consisted of Au nanoparticles with well-ordered interspacing, while Pt was present in the form of a continuous film. Photoconductive-AFM data show that upon illumination significantly larger currents are measured for the WO/pn Si anode equipped with the Au interface, as compared to the WO/pn Si anode with the Pt interface, in agreement with the better performance of the former electrode in a photoelectrochemical cell. The remarkable performance of the Au-containing electrode is proposed to be the result of favorable electron-hole recombination rates induced by the Au nanoparticles in a plasmon resonance excited state.

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Section: Resultsmentioning

confidence: 99%

Characterization of opto-electrical enhancement of tandem photoelectrochemical cells by using photoconductive-AFM

et al. 2017

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“…There have been numerous research works conducted to enhance the thermal stability of NiSi films. Incorporation of other metal elements such as Zr, 9) Ru, 10) Au, 10) Pt 11,12) at the interface between Ni films and the Si substrate to stabilize NiSi films over 800 °C has been recently reported. The other methods are ion implantation or plasma treatment before Ni deposition to enhance thermal stability of NiSi.…”

Section: Introductionmentioning

confidence: 99%

Improvement of thermal stability of nickel silicide film using NH₃plasma treatment

Park

Jeon

Kim

et al. 2014

Jpn. J. Appl. Phys.

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In this study, the effects of NH 3 plasma pre-treatment on the characteristics of NiSi films were investigated. Nickel film was deposited on a Si(100) substrate by meal-organic chemical vapor deposition (MOCVD) using Ni( i Pr-DAD) 2 as a Ni precursor and NH 3 gas as a reactant. Before the Ni deposition, silicon substrate was treated by NH 3 plasma with various flow rates to adjust the amount of inserted hydrogen and nitrogen atoms. The Ni films showed a considerable low sheet resistance around 12 Ω/□, irrespective of the NH 3 plasma pre-treatment conditions. The sheet resistance of the all Ni films was decreased after annealing at 500 °C due to formation of a low resistive NiSi phase. NiSi films with a high flow rate of NH 3 plasma pre-treatment exhibited a lower sheet resistance and smoother interface between NiSi and the Si substrate than the low flow rate of the NH 3 plasma pre-treated NiSi films because lots of nitrogen atoms incorporated at grain boundary of NiSi which result in reduce total surface/ interface energy of NiSi and enhancement interface characteristics.

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Microstructure evolution with RTA temperature in nano-thick (Ru or Au)-inserted nickel silicides

Cited by 2 publications

References 17 publications

Characterization of opto-electrical enhancement of tandem photoelectrochemical cells by using photoconductive-AFM

Characterization of opto-electrical enhancement of tandem photoelectrochemical cells by using photoconductive-AFM

Improvement of thermal stability of nickel silicide film using NH₃plasma treatment

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Microstructure evolution with RTA temperature in nano-thick (Ru or Au)-inserted nickel silicides

Cited by 2 publications

References 17 publications

Characterization of opto-electrical enhancement of tandem photoelectrochemical cells by using photoconductive-AFM

Characterization of opto-electrical enhancement of tandem photoelectrochemical cells by using photoconductive-AFM

Improvement of thermal stability of nickel silicide film using NH3plasma treatment

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Improvement of thermal stability of nickel silicide film using NH₃plasma treatment