2018
DOI: 10.1007/s10854-018-9598-7
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Microstructure evolution and grain orientation in ITO targets and their effects on the film characteristics

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Cited by 10 publications
(6 citation statements)
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“…Based on the film growth theory, whether with or without a (100) preferred orientation, the polycrystalline ITO film contains many grain boundaries [32,33,34,35], as shown in Figure 8a,b. Moreover, the boldCHx+ group diffuses on the ITO grain boundary, as well as into the ITO grain.…”
Section: Resultsmentioning
confidence: 99%
“…Based on the film growth theory, whether with or without a (100) preferred orientation, the polycrystalline ITO film contains many grain boundaries [32,33,34,35], as shown in Figure 8a,b. Moreover, the boldCHx+ group diffuses on the ITO grain boundary, as well as into the ITO grain.…”
Section: Resultsmentioning
confidence: 99%
“…Thus, TCMs are usually evaluated through a figure-of-merit (FoM), defined as FoM = 188.5/( R s (1/(√ T – 1) ( R s is the sheet resistance and T is the optical transmittance) . The typical FoM values of ITO, AgNWs, ultrathin metal, and metal mesh are 25.5, 121.6, 1095.9, and 1365.9, respectively. As far as the FoM is concerned, ultrathin metal and metal mesh are better candidates for composing optically transparent metamaterials, compared with ITO and AgNWs.…”
Section: Theoretical Design and Experimental Methodsmentioning
confidence: 99%
“…Under pure argon, the high-energy Ar + bombardment of ITO target could easily decompose In 2 O 3 into cheap indium oxide (In 2 O 3-x ) and free oxygen. By comparison, target A with low oxygen content more likely formed In 2 O 3-x , thereby producing less free oxygen and favorably forming oxygen vacancies in ITO films [27,28]. In addition, SnO may also grab the oxygen from In 2 O 3 to yield In 2 O 3-x during the oxidation process of SnO 2 .…”
Section: Effect Of Target Oxygen Content On Resistivity Of Ito Filmmentioning
confidence: 99%