Microstructure effect on dielectric Properties of MgO-doped BaTiO3–BiYO3 ceramics

Huang, Xuechen; Liu, Hanxing; Hao, Hua; Zhang, Shujun; Sun, Yan–Hui; Zhang, Wenqin; Zhang, Lin; Cao, Minghe

doi:10.1016/j.ceramint.2015.02.070

Cited by 26 publications

(7 citation statements)

References 40 publications

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“…A-site substitutions in BaTiO 3 ceramics in-clude Sr 2+ , Ca 2+ , Mg 2+ , etc. [6][7][8]. B-site substitutions include Hf 4+ , Sn 4+ , Zr 4+ , Ta 5+ , Nb 5+ , etc.…”

Section: Introductionmentioning

confidence: 99%

Dielectric and ferroelectric behaviour of Zr-doped BaTiO3 perovskites

Xu¹

2020

PAC

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The crystal structure, microstructure, dielectric and ferroelectric behaviour of Ba(Zr x Ti 1-x )O 3 (x = 0.05, 0.10, 0.15, 0.20, 0.25) perovskites fabricated by high-temperature solid state method were investigated. Zr 4+ ions are dissolved completely into B-site of the matrix BaTiO 3 within the studied composition range, leading to an expansion of the lattice. The average grain size decreased with Zr content increasing. In P-E loops, the remanent polarization gradually decreased with Zr-doping, indicating the depression of ferroelectricity. Temperature dependent dielectric properties at different frequencies exhibited obvious relaxor behaviour. It was shown that diffuseness coefficient γ increased from 1.45 (x = 0.05) to 1.89∼1.90 (x = 0.10-0.25) by using the modified Curie-Weiss law for the fit. The permittivity of the Ba(Zr x Ti 1-x )O 3 ceramics at room temperature was largely improved by Zr-doping, thus when x = 0.20, ε r (1 kHz) = 10790.

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“…A-site substitutions in BaTiO 3 ceramics in-clude Sr 2+ , Ca 2+ , Mg 2+ , etc. [6][7][8]. B-site substitutions include Hf 4+ , Sn 4+ , Zr 4+ , Ta 5+ , Nb 5+ , etc.…”

Section: Introductionmentioning

confidence: 99%

Dielectric and ferroelectric behaviour of Zr-doped BaTiO3 perovskites

Xu¹

2020

PAC

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“…BaTiO 3 -based ceramics are widely used in modern electronics because of their excellent ferroelectric and piezoelectric properties, and various dopants have been adopted to achieve high application performance. Singly doped magnesium (Mg 2+ ) and Mg and rare earth co-doped BaTiO 3 (ABO 3 ) compounds that satisfy X7R or X8R specification have found applications in multilayer ceramic capacitors (MLCCs) [1,2,3,4,5,6].…”

Section: Introductionmentioning

confidence: 99%

Electron Paramagnetic Resonance Study on Oxygen Vacancies and Site Occupations in Mg-Doped BaTiO3 Ceramics

Zheng

Yuan

2019

Materials

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Nominal (Ba1−xMgx)TiO3 (x = 0.015) (BM1T) and (Ba1−xMgx)TiO3 (x = 0.03–0.20) (BMT) ceramics were prepared by the mixed-oxide route at sintering temperatures (Ts) of 1200−1400 °C and 1200 °C, respectively. The solubility limit of Mg2+ in BMT was determined by XRD to be x = 0.05, and evidence was found for occupation of the A site by Mg2+. Electron paramagnetic resonance (EPR) was employed as a key technique to investigate the effect of Ts on oxygen vacancies in BM1T. The structure of BM1T changed from pseudocubic at Ts = 1200 °C to tetragonal at 1300 °C to mixed phases of hexagonal and tetragonal at 1400 °C. When Ts ≥ 1300 °C, a g = 1.956 EPR signal was observed at T = −188 °C and assigned as ionized oxygen vacancies. Mg2+ exhibited amphoteric behavior of substituting for the double cation sites. When Ts = 1400 °C, B-site Mg2+ and oxygen vacancies mainly existed in the hexagonal phase and A-site Mg2+ was dominant in the tetragonal phase. The higher tan δ was attributed to the higher concentrations of oxygen vacancies and Ti3+ in the hexagonal phase.

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“…BaTiO 3 is used in electric devices manufactured to work at temperatures less than its Curie temperature (T c =120°C). In devices functioning at a temperature other than 120°C, it is mixed with other materials such as Mg, PbTiO 3 (PT), Zr oxide, and other oxides, in order to shift T c , above or under 120°C [5][6][7][8][9][10][11]. Pure BaTiO 3 exhibits very high electric permittivity, since it has positive -temperature-coefficient resistivity (PTCR) above the Curie temperature [12,13].…”

Section: Introductionmentioning

confidence: 99%

MgO Effect on The Dielectric Properties of BaTiO3

Boumous

Belkhiat

Kharchouche

2019

Eng. Technol. Appl. Sci. Res.

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The dielectric properties of barium titanate as functions of the MgO addition in various rates are investigated in this paper. The ceramics were prepared by conventional methods. X-ray diffraction, scanning electron microscopy and energy dispersive spectrometry, were applied to determine the structure and microstructure of the studied material. Phases MgO, TiO and TiO2, have been detected. Decrease of the grain size with increasing MgO content was observed. Measurements of εr, tgδ and resistance have been performed at temperatures ranging from 300C to 4000C. The electric permittivity (εr) showed a considerable decrease with increasing MgO concentration. Additionally, for low MgO concentration (10£mol.% MgO) a shift of the dielectric loss peak (tgδm) towards low temperatures was observed. When the MgO content was ≥15mol.% MgO the tgδm moved into higher temperatures. The obtained results indicate that the substitution of Mg2+ ions in B-site ions (Ti4+) had a significant influence on the values of εr, tgδ and the resistance increase of the ceramics.

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Microstructure effect on dielectric Properties of MgO-doped BaTiO3–BiYO3 ceramics

Cited by 26 publications

References 40 publications

Dielectric and ferroelectric behaviour of Zr-doped BaTiO3 perovskites

Dielectric and ferroelectric behaviour of Zr-doped BaTiO3 perovskites

Electron Paramagnetic Resonance Study on Oxygen Vacancies and Site Occupations in Mg-Doped BaTiO3 Ceramics

MgO Effect on The Dielectric Properties of BaTiO3

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