2008
DOI: 10.1007/s10971-008-1841-x
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Microstructure, dielectric properties and optical band gap control on the photoluminescence behavior of Ba[Zr0.25Ti0.75]O3 thin films

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Cited by 85 publications
(16 citation statements)
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“…This observation confirmed that the PL response is directly ascribed to localized states in the band gap due to structural defects in the (Ca 1Àx Cu x ) TiO 3 crystalline structure. The green emission (less energetic) is accompanied by a reduction in the E gap for CCTO2 crystals, which is related to the insert of deep defects between the valence and conduction bands [57]. Moreover, we have observed a low concentration of shallow defects in violeteblue region in PL spectra for all (Ca 1Àx From these FE-SEM images shown in the Fig.…”
Section: Photoluminescence Analyses: Emission Spectra Studiesmentioning
confidence: 51%
“…This observation confirmed that the PL response is directly ascribed to localized states in the band gap due to structural defects in the (Ca 1Àx Cu x ) TiO 3 crystalline structure. The green emission (less energetic) is accompanied by a reduction in the E gap for CCTO2 crystals, which is related to the insert of deep defects between the valence and conduction bands [57]. Moreover, we have observed a low concentration of shallow defects in violeteblue region in PL spectra for all (Ca 1Àx From these FE-SEM images shown in the Fig.…”
Section: Photoluminescence Analyses: Emission Spectra Studiesmentioning
confidence: 51%
“…This mechanism occurs by the grain boundary motion owing to a reduction of the total grain boundary surface energy. The thermal energy leads to an increase in the diffusion rate and consequently intensifies the formation of necks between grains, which was confirmed from (AFM þ FESEM) microstructures [13]. The average crystallite size of the films estimated using Scherrer's formula increases from 9 to 18 nm with an increasing the O 2 SCCM.…”
Section: 2mentioning
confidence: 60%
“…The different electronic interactions of Ti with N anions by co-doping causes partial electron transformation from the N to Ti and an increase of the electron density on Ti because of the lower electro negativity of nitrogen compared with oxygen [26,27]. On the other hand, the shifts of Ti 2p 3/2 and the O 1s peaks are due to the introduction of oxygen vacancies into the TiO 2 lattice [28,29]. In our related experiments, the formation of single-electron-trapped oxygen vacancy in the structure of [O Ti O Ti ] have been confirmed for N-doped TiO 2 sample using electron spin resonance (ESR) [30].…”
Section: Xps Analysesmentioning
confidence: 99%