2005
DOI: 10.1016/j.jcrysgro.2004.11.406
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Microstructure dependence of the electrical properties of (Ba,Sr)TiO3 thin film deposited on (La,Sr)MnO3 conductive layer

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Cited by 18 publications
(11 citation statements)
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“…31,33) A similar conduction mechanism has also been described for BST films that have been deposited on other oxide electrodes. 15,34) However, the leakage current mechanism in Mn-doped BST films herein is not yet clear. Ahn et al suggested that the suppression of leakage current Mn-doped 750°C 750°C Mn-doped 650°C 650°C in Pt/Mn-doped BST/Pt capacitors appeared to be caused by a widened depletion layer, which reduces tunneling.…”
Section: Resultsmentioning
confidence: 98%
See 1 more Smart Citation
“…31,33) A similar conduction mechanism has also been described for BST films that have been deposited on other oxide electrodes. 15,34) However, the leakage current mechanism in Mn-doped BST films herein is not yet clear. Ahn et al suggested that the suppression of leakage current Mn-doped 750°C 750°C Mn-doped 650°C 650°C in Pt/Mn-doped BST/Pt capacitors appeared to be caused by a widened depletion layer, which reduces tunneling.…”
Section: Resultsmentioning
confidence: 98%
“…12) Recently, conductive perovskite oxide electrodes, such as (La,Sr)MnO 3 , (La,Ca)MnO 3 , SrRuO 3 , and LaNiO 3 have become attractive as electrode materials in BST capacitors because they are similar in terms of crystal structure and chemistry. [13][14][15] Although some investigations have described the effect of acceptor dopants on the electrical properties of BST films, [8][9][10] systematic studies of the correlation between the lattice and the electrical properties, which is determined by the processing conditions and the acceptor doping in the BST lattice, are lacking. In this study, Mn ions were substituted at the Ti sites in BST.…”
Section: Introductionmentioning
confidence: 99%
“…3,5,6 Many researchers have continuously made attempts to enhance the properties of BST thin films by improving the crystalline quality, film-electrode interface, and interfacial strain. 7,8 Recently, it has been shown that textured BST thin films can be grown using the single crystal substrates like MgO and SrTiO 3 9,10 and very thin buffered layer like SrRuO 3 or (La,Sr)MnO 3 as a bottom electrode. 7,11 The studies on textured BST thin films revealed that their ferroelectric properties strongly depend upon texture selection.…”
Section: Introductionmentioning
confidence: 99%
“…7,8 Recently, it has been shown that textured BST thin films can be grown using the single crystal substrates like MgO and SrTiO 3 9,10 and very thin buffered layer like SrRuO 3 or (La,Sr)MnO 3 as a bottom electrode. 7,11 The studies on textured BST thin films revealed that their ferroelectric properties strongly depend upon texture selection. 12 Hence, the control of crystal orientation is the easy way to tailor the properties as desired for devices.…”
Section: Introductionmentioning
confidence: 99%
“…Alternatively, multiferroic composites are likely to possess a large magnetoelectric coupling factor with high value of M S and P S , which is desirable for device applications as compared to the single-phase counterpart. The strong magnetoelectric coupling factor is due to effective strain-mediated ME coupling giving rise to the giant product property of the piezoelectric and magnetostrictive effect of both the components (Martin et al 2008;Singh et al 2006;Miao et al 2005;Mathews et al 1997). To obtain maximum electromagnetic coupling coefficient, various composite systems have been fabricated and characterized in different forms such as, (1) multilayer nano-structured thin film of ferroelectric and magnetic oxides, (2) bulk composite in 0-3 connectivity (where second phase particles embedded in a primary matrix phase), (3) three phase ME composites of ferroelectric and ferromagnetic oxides dispersed in polymer matrix and (4) 1-3 self-assembled ME composite thin films consisting of FE or FM nanopillars embedded in a FM or FE matrix by several research groups (Martin et al 2008;Singh et al 2006;Miao et al 2005;Mathews et al 1997;Catlan and Scott 2009;Martínez et al 2010;Zheng et al 2004;Yan et al 2010).…”
Section: Introductionmentioning
confidence: 99%