Microstructure and transport properties of [001]-tilt bicrystal grain boundaries in iron pnictide superconductor, cobalt-doped BaFe2As2

Hiramatsu, Hidenori; Katase, Takayoshi; Ishimaru, Yoshihiro; Tsukamoto, Akira; Kamiya, Toshio; Tanabe, K.; Hosono, Hideo

doi:10.1016/j.mseb.2011.12.009

Cited by 35 publications

(30 citation statements)

References 39 publications

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“…Figure 5 (a) shows the vortex phase diagram of the It would be better to determine H c2 and H irr by thermodynamic measurements such as heat capacity measurements, but these are difficult for thin films. We confirmed that these criterions of H irr and H c2 are consistent with the values determined by I-V and magnetic susceptibility measurements [38] with the criterion of Because this difference is observed at the same T and H and depends on the sweep history, it originates from a hysteresis phenomenon probably due to the dynamics of the vortices.…”

Section: (B)]supporting

confidence: 90%

Anomalous scaling behavior in a mixed-state Hall effect of a cobalt-doped BaFe2As2epitaxial film with a high critical current density over 1 MA/cm
Sato
¹
,
Katase
²
,
Kang
³

et al. 2013
Phys. Rev. B
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The mixed-state Hall effect was examined in a Ba(Fe 1-x Co x ) 2 As 2 epitaxial film with a high critical current density. The transverse resistivity ρ xy and the longitudinal resistivity ρ xx follow power law scaling ρ xy = Aρ xx β . In the temperature-sweep with a fixed field (T sweep), all of the β values are independent of magnetic field up to 9 T, and are lower than 2.0 (around 1.8). In contrast, the β values in the magnetic-field sweep with a fixed temperature (H sweep) change from 1.8 to 2.0 as the temperature increases from 13 to 16 K even in the T/H region that overlaps with the T sweep measurements. These results indicate that the vortices introduced at low temperatures are trapped by strong pinning centers, but a portion of the vortices introduced at high temperatures are not strongly trapped by the pinning centers. The sign of ρ xy is negative, and a sign reversal is not detected. These distinct scaling behaviors, which sharply contrast cuprates and MgB 2 , are explained by high-density c-axis pinning centers in the Ba(Fe 1-x Co x ) 2 As 2 epitaxial film and are consistent with a wider vortex liquid phase. H. Sato et al. 3

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Section: (B)]supporting

confidence: 90%

Anomalous scaling behavior in a mixed-state Hall effect of a cobalt-doped BaFe2As2epitaxial film with a high critical current density over 1 MA/cm
Sato
¹
,
Katase
²
,
Kang
³

et al. 2013
Phys. Rev. B
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“…3(b) is the high-resolution TEM image of the NdFeAs(O,F) thin film in the vicinity of the MgO textured template / NdFeAs(O,F) film interface. Clearly a relatively sharp interface is observed between NdFeAs(O,F) and MgO, which is similar to the Co-doped Ba-122 and Fe(Se,Te) thin films on MgO single crystalline substrates prepared by pulsed laser deposition 19,20 . These results indicate that MgO single crystalline substrates or textured MgO templates are suitable for epitaxial growth of Fe-based superconducting thin films, similarly to CaF 2 substrate 13,21-23 .…”

Section: 13supporting

confidence: 61%

Highly textured oxypnictide superconducting thin films on metal substrates

Iida

Kurth

Chihara

et al. 2014

Applied Physics Letters

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Highly textured NdFeAs(O,F) thin films have been grown on ion beam assisted deposition (IBAD)-MgO/Y 2 O 3 /Hastelloy substrates by molecular beam epitaxy. The oxypnictide coated conductors showed a superconducting transition temperature (T c ) of 43 K with a self-field critical current density (J c ) of 7.0 × 10 4 A/cm 2 at 5 K, more than 20 times higher than powder-in-tube processed SmFeAs(O,F) wires. Albeit higher T c as well as better crystalline quality than Co-doped BaFe 2 As 2 coated conductors, in-field J c of NdFeAs(O,F) was lower than that of Co-doped BaFe 2 As 2 . These results suggest that grain boundaries in oxypnictides reduce J c significantly compared to that in Co-doped BaFe 2 As 2 and, hence biaxial texture is necessary for high J c .PACS numbers: 74.70. Xa, 81.15.Fg, 74.25.Sv, 74.25.FElectron or hole doped AEFe 2 As 2 (AE =Ba and Sr) and Fe(Se,Te) show high upper critical fields with low anisotropies at low temperatures that offer a unique possibility for high field magnet applications 1,2 . Thanks to the recent progress of processing technology, powder-intube (PIT) processed AEFe 2 As 2 yields high performance of in-field critical current density (J c ) 3-5 . Furthermore, Co-doped BaFe 2 As 2 and Fe(Se,Te) on ion beam assisted deposition (IBAD)-MgO/Y 2 O 3 /Hastelloy with comparable J c to those on single crystalline substrates have been demonstrated, although the texture quality of the formers is inferior to the latters 6-9 . These results indicate that J c properties are quite robust against grain boundaries (GBs) in those materials. Indeed, the critical angle for Co-doped BaFe 2 As 2 at which J c starts to being degraded is twice as large as cuprates

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“…We observed similar reaction layers also in the 532 and 1064 nm laser ablations. In previous work on MgO substrates, 36 we did not observe a thin reacted interfacial layer. Thus, we believe this interfacial phenomenon will commonly occur when epitaxially growing Ba(Fe,Co) 2 As 2 films on LSAT substrates.…”

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confidence: 43%

Critical factor for epitaxial growth of cobalt-doped BaFe2As2 films by pulsed laser deposition

Hiramatsu

Sato

Katase

et al. 2014

Applied Physics Letters

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We heteroepitaxially grew cobalt-doped BaFe 2 As 2 films on (La,Sr)(Al,Ta)O 3 single-crystal substrates by pulsed laser deposition using four different wavelengths and investigated how the excitation wavelength and pulse energy affected growth. Using the tilting and twisting angles of X-ray diffraction rocking curves, we quantitatively analyzed the crystallinity of each film. We found that the optimal deposition rate, which could be tuned by pulse energy, was independent of laser wavelength. The high-quality film grown at the optimal pulse energy (i.e., the optimum deposition rate) exhibited high critical current density over 1 MA/cm 2 irrespective of the laser wavelength.

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Microstructure and transport properties of [001]-tilt bicrystal grain boundaries in iron pnictide superconductor, cobalt-doped BaFe2As2

Cited by 35 publications

References 39 publications

Anomalous scaling behavior in a mixed-state Hall effect of a cobalt-doped BaFe2As2epitaxial film with a high critical current density over 1 MA/cm
Sato
¹
,
Katase
²
,
Kang
³

et al. 2013
Phys. Rev. B
Self Cite
17
1
7
0
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Anomalous scaling behavior in a mixed-state Hall effect of a cobalt-doped BaFe2As2epitaxial film with a high critical current density over 1 MA/cm
Sato
¹
,
Katase
²
,
Kang
³

et al. 2013
Phys. Rev. B
Self Cite
17
1
7
0
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Highly textured oxypnictide superconducting thin films on metal substrates

Critical factor for epitaxial growth of cobalt-doped BaFe2As2 films by pulsed laser deposition

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Microstructure and transport properties of [001]-tilt bicrystal grain boundaries in iron pnictide superconductor, cobalt-doped BaFe2As2

Cited by 35 publications

References 39 publications

Anomalous scaling behavior in a mixed-state Hall effect of a cobalt-doped BaFe2As2epitaxial film with a high critical current density over 1 MA/cmSato1, Katase2, Kang3 et al. 2013Phys. Rev. BSelf Cite17170View full textAdd to dashboardCite

Anomalous scaling behavior in a mixed-state Hall effect of a cobalt-doped BaFe2As2epitaxial film with a high critical current density over 1 MA/cmSato1, Katase2, Kang3 et al. 2013Phys. Rev. BSelf Cite17170View full textAdd to dashboardCite

Highly textured oxypnictide superconducting thin films on metal substrates

Critical factor for epitaxial growth of cobalt-doped BaFe2As2 films by pulsed laser deposition

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Anomalous scaling behavior in a mixed-state Hall effect of a cobalt-doped BaFe2As2epitaxial film with a high critical current density over 1 MA/cm
Sato
¹
,
Katase
²
,
Kang
³

et al. 2013
Phys. Rev. B
Self Cite
17
1
7
0
View full text Add to dashboard Cite

Anomalous scaling behavior in a mixed-state Hall effect of a cobalt-doped BaFe2As2epitaxial film with a high critical current density over 1 MA/cm
Sato
¹
,
Katase
²
,
Kang
³

et al. 2013
Phys. Rev. B
Self Cite
17
1
7
0
View full text Add to dashboard Cite