Microstructure and temperature-dependence of Raman scattering properties of β-(AlxGa1-x)2O3 crystals

Cheng, Xian; Niu, Wenlong; Wan, Lingyu; Xia, Changtai; Cui, Huiyuan; Talwar, Devki N.; Feng, Zhe Chuan

doi:10.1016/j.spmi.2020.106469

Cited by 14 publications

(14 citation statements)

References 22 publications

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“…All of the peaks shift toward the higher wavenumber with the incorporation of Al 3+ ions due to the larger atomic weight of Ga 3+ (69.72 amu) compared to that of Al 3+ (26.98 amu). , For the x = 0 sample, the peak at 272 cm –1 can be attributed to the translational motion of [GaO 4 ] tetrahedrons . Besides, the peaks in the regions of 300–600 cm –1 belong to the deformation of [GaO 4 ] tetrahedrons and [GaO 6 ] octahedrons . The peaks in the region >600 cm –1 belong to the stretching and bending of [GaO 4 ] tetrahedrons .…”

Section: Results and Discussionmentioning

confidence: 95%

“…18 Besides, the peaks in the regions of 300−600 cm −1 belong to the deformation of [GaO 4 ] tetrahedrons and [GaO 6 ] octahedrons. 19 The peaks in the region >600 cm −1 belong to the stretching and bending of [GaO 4 ] tetrahedrons. 19 One can observe a significant shift of the peaks at around 320 cm −1 between the x = 0.6 and 0.8 samples, revealing the potential structural change between them.…”

Section: ■ Introductionmentioning

confidence: 99%

“…19 The peaks in the region >600 cm −1 belong to the stretching and bending of [GaO 4 ] tetrahedrons. 19 One can observe a significant shift of the peaks at around 320 cm −1 between the x = 0.6 and 0.8 samples, revealing the potential structural change between them. On the other hand, the bandwidth of the peaks at around 600 cm −1 becomes broader for the x = 0.8 sample due to the simultaneous occupancy of Li + , Al 3+ , and Ga 3+ at the octahedral sites, causing nonuniform and disordered polyhedrons in the structure.…”

Section: ■ Introductionmentioning

confidence: 99%

“…On the other hand, the bandwidth of the peaks at around 600 cm −1 becomes broader for the x = 0.8 sample due to the simultaneous occupancy of Li + , Al 3+ , and Ga 3+ at the octahedral sites, causing nonuniform and disordered polyhedrons in the structure. 19 Morphologies. Powder morphologies are also important information for phosphor materials.…”

Section: ■ Introductionmentioning

confidence: 99%

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Probing Local Structural Changes by Sharp Luminescent Infrared Nanophosphor for Application in Light-Emitting Diodes

et al. 2022

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Cr3+-doped infrared phosphors are promising candidates for next-generation phosphor-converted infrared light-emitting diodes (LEDs) because they can, in principle, tune and convert the luminescence spectra from an LED chip. However, most studies focus on broad-band Cr3+-doped phosphors, and the control mechanism of Cr3+-doped phosphors with sharp line emissions remains ambiguous. Here, we report LiGa5(1–x)Al5x O8:Cr3+ phosphors with sharp line emissions. The luminescence analysis reveals the subtle change of the local structure around Cr3+, which cannot be well resolved by X-ray diffraction. The deviation between the temperature-dependent photoluminescence and decay profile is introduced as well. Furthermore, the morphologies of LiGa5(1–x)Al5x O8:Cr3+ phosphors with high aluminum concentration demonstrate their great potential for mini-LED applications. Finally, an LED package is constructed, and it reveals the potential for angiographic applications. This study opens up a new understanding and perspective for Cr3+-doped sharp emission phosphors and reveals their potential for LED applications.

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Section: Results and Discussionmentioning

confidence: 95%

Section: ■ Introductionmentioning

confidence: 99%

Section: ■ Introductionmentioning

confidence: 99%

Section: ■ Introductionmentioning

confidence: 99%

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Probing Local Structural Changes by Sharp Luminescent Infrared Nanophosphor for Application in Light-Emitting Diodes

et al. 2022

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“…For the β-Ga 2 O 3 bulk, 11 Raman scattering peaks are clearly observed, which is consistent with the results reported in the literature. [47,48] Although part of the Raman scattering peaks of the sapphire substrate in the β-Ga 2 O 3 films overlaps with the β-Ga 2 O 3 bulk materials, the number of corresponding characteristic peaks has not changed. Obviously, due to the compressive stress between the sapphire substrate and the β-Ga 2 O 3, the Raman scattering peaks of the β-Ga 2 O 3 films (x ¼ 0) have a blueshift compared to the β-Ga 2 O 3 single-crystal materials.…”

Section: Raman Spectramentioning

confidence: 99%

Bandgap Tailoring of Monoclinic Single‐Phase β‐(Al_xGa_1−x)₂O₃ (0 ≤ x ≤ 0.65) Thin Film by Annealing β‐Ga₂O₃/Al₂O₃ Heterojunction at High Temperatures

Feng

et al. 2021

Physica Status Solidi (a)

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Recently, β-Ga 2 O 3 has attracted extensive attention because of its ultrawide bandgap (%4.8 eV), [1,2] high theoretical breakdown electric field (E br ) (8 MV cm À1 ), [3,4] and higher Baliga figure of merit (BFOM) compared with GaN and SiC. The highly mature bulk growth and thin film deposition techniques [5][6][7] make both homo- [8][9][10] and heteroepitaxial [11,12] growth of Ga 2 O 3 thin films with controllable doping possible, [13][14][15][16] which is important for practical applications such as power switches, [17,18] high-efficiency devices, [19] and deep-UV photodetectors. [20,21] To develop and optimize modern electronic and optoelectronic devices with great flexibility, energy band engineering is necessary for designing and preparing barrier layers, which show better carrier confinement with larger band offsets in device structures. [22] It has been demonstrated that the bandgap of β-(Al x Ga 1Àx ) 2 O 3 depends on the Al composition (x), and increases with it. [23] Many works in the literature report the growth of β-(Al x Ga 1Àx ) 2 O 3 thin films using molecular beam epitaxy (MBE), [24][25][26] metal organic chemical vapor deposition (MOCVD), [27] pulsed laser deposition (PLD), [28] sputtering [29] and solution combustion synthesis, [30] etc., and studies on the Al incorporation effect on the surface morphology and crystalline quality, which are summarized in Table 1. β-(Al x Ga 1Àx ) 2 O 3 epitaxial film by MOCVD and MBE is mainly used for highpower electronic applications. For instance, by constructing a β-(Al x Ga 1Àx ) 2 O 3 /β-Ga 2 O 3 heterojunction with a Si delta-doped layer in β-(Al x Ga 1-x ) 2 O 3 to prepare a modulated doped field effect

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NIR Mechanoluminescence from Cr³⁺ Activated Y₃Al₅O₁₂ with Intense Zero Phonon line

Liu

Peng

et al. 2023

Adv Funct Materials

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Mechanoluminescence (ML) materials with long-wavelength emission bands are essential for future in vivo bioimaging, non-destructive testing of solids, etc. The lack of a defined mechanism, however, prevents the application of near infrared ML materials above 650 nm in several new fields. Here, the addition of Ga 3+ ions to Y 3 Al 5 O 12 : Cr 3+ manipulates matrix microstructure evolution, boosting near-infrared (NIR) zero-phonon line (ZPL) stress optical output of the Cr 3+ ion at 688 nm. The key factor changing the crystal field intensity D q /B due to the addition of Ga 3+ ions is what causes the luminescence amplification of ZPL. The ML fabricated by composite polydimethylsiloxane and Y 3 Al 4 GaO 12 : Cr 3+ (YAGG: Cr 3+ ) may penetrate chicken feet epidermal tissue and 4 mm pork tissue thanks to the strong NIR ZPL emission of YAGG: Cr 3+ phosphor. This discovery of enhancing near-infrared ZPL intensity by solid solution provides us with a new technique for optimizing NIR ML materials, as well as a new prospect for NIR ML materials in biological applications.

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Microstructure and temperature-dependence of Raman scattering properties of β-(AlxGa1-x)2O3 crystals

Cited by 14 publications

References 22 publications

Probing Local Structural Changes by Sharp Luminescent Infrared Nanophosphor for Application in Light-Emitting Diodes

Probing Local Structural Changes by Sharp Luminescent Infrared Nanophosphor for Application in Light-Emitting Diodes

Bandgap Tailoring of Monoclinic Single‐Phase β‐(Al_xGa_1−x)₂O₃ (0 ≤ x ≤ 0.65) Thin Film by Annealing β‐Ga₂O₃/Al₂O₃ Heterojunction at High Temperatures

NIR Mechanoluminescence from Cr³⁺ Activated Y₃Al₅O₁₂ with Intense Zero Phonon line

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Microstructure and temperature-dependence of Raman scattering properties of β-(AlxGa1-x)2O3 crystals

Cited by 14 publications

References 22 publications

Probing Local Structural Changes by Sharp Luminescent Infrared Nanophosphor for Application in Light-Emitting Diodes

Probing Local Structural Changes by Sharp Luminescent Infrared Nanophosphor for Application in Light-Emitting Diodes

Bandgap Tailoring of Monoclinic Single‐Phase β‐(AlxGa1−x)2O3 (0 ≤ x ≤ 0.65) Thin Film by Annealing β‐Ga2O3/Al2O3 Heterojunction at High Temperatures

NIR Mechanoluminescence from Cr3+ Activated Y3Al5O12 with Intense Zero Phonon line

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Bandgap Tailoring of Monoclinic Single‐Phase β‐(Al_xGa_1−x)₂O₃ (0 ≤ x ≤ 0.65) Thin Film by Annealing β‐Ga₂O₃/Al₂O₃ Heterojunction at High Temperatures

NIR Mechanoluminescence from Cr³⁺ Activated Y₃Al₅O₁₂ with Intense Zero Phonon line