Microstructure and superconducting properties of thin films of YBCO on (100) MgO substrate grown by glow discharge deposition

Microstructure and mechanical properties of Ir–Ta coatings on nickel-base single-crystal superalloy TMS-75

“…For example, the formation of TiAl and YBa 2 Cu 3 O 7Ϫx crystalline films by sputtering was reported only at higher substrate temperatures. 39,40 XRD analysis of the Ir-Ta films indicated a variation in the 2 position of the peak at about 40°when tantalum is added to iridium. This shifting could be produced by deformations due to: ͑i͒ substrate-film stresses and ͑ii͒ metal alloying.…”

A simple route for synthesis of a bi-epitaxial junction in thin films of YBa2Cu3O7 ? x

“…Films which possess a basket-weave microstructure show greater current densities (of the order of lo6 Acmp2 at 77 K) than films which possess rectangular domains or a granular microstructure. We have reported [9] the morphology, interrelationship with critical current density and microstructures of the films processed under different conditions. In the present investigation, the orientation relationship suggested for the growth of the YBCO film on CeO, can tilt the regular basket-weave microstructure by 45" with respect to the basket-weave structure obtained on SrTiO, [12].…”

“…In addition, the lattice mismatch ( ~ 28%) is useful in controlling the in-plane epitaxy of the growing YBCO films. This paper reports a simple fabrication process for synthesizing a bi-epitaxial junction comprising a deposition of CeO/buffer layer on (1 0 0) SrTiO3 by thermal evaporation and subsequent YBCO coating by glow discharge sputtering [8,9]. Microstructure and transport properties of the junction structure are also reported.…”

Oxygen diffusion and defect mechanism in c-axis textured thin films of YBa2Cu3O7−x by resistivity measurements

“…The method of YBCO film preparation by glow discharge sputtering and measure, ments are reported elsewhere (Kuppusami and Raghunathan 1991;Kuppusami et al 1993). Four-probe resistivity technique was used to monitor the resistance as a function of time both in the reducing (out-diffusion) and oxidizing (in-diffusion) atmosphere.…”