Microstructure and strain relaxation of orthorhombic TmMnO3 epitaxial thin films

Yu, Yi; Zhang, X.; Yang, Juping; Wang, J.W.; Zhao, Yonggang

doi:10.1016/j.jcrysgro.2011.11.031

Cited by 5 publications

(4 citation statements)

References 17 publications

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“…On the other hand, using a higher index plane of cubic substrates (such as (110)STO) could have some advantages because the in-plane square symmetry is broken, thus facilitating the growth of orthorhombic thin films. This approach has been used to obtain a-textured HoMnO 3 [72], TmMnO 3 [73,74] and YMnO 3 [70,71] films (Fig. 8b).…”

Section: Growth Of O-rmno 3 Thin Filmsmentioning

confidence: 99%

Multiferroic RMnO3 thin films

Fontcuberta

2015

Comptes Rendus. Physique

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Multiferroic materials have received an astonishing attention in the last decades due to expectations that potential coupling between distinct ferroic orders could inspire new applications and new device concepts. As a result, a new knowledge on coupling mechanisms and materials science has dramatically emerged. Multiferroic RMnO3 perovskites are central to this progress providing a suitable platform to tailor spin-spin and spin-lattice interactions. With views towards applications, development of thin films of multiferroic materials have also progressed enormously and nowadays thin film manganites are available with properties mimicking those of bulk compounds. Here we review achievements on the growth and characterization of magnetic and ferroelectric properties of hexagonal and orthorhombic RMnO3 epitaxial thin films, discuss some challenging issues and we suggest some guidelines for future research and developments.Comment: Review pape

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Section: Growth Of O-rmno 3 Thin Filmsmentioning

confidence: 99%

Multiferroic RMnO3 thin films

Fontcuberta

2015

Comptes Rendus. Physique

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“…Every increase in elastic energy, which the increasing thickness would cause, is immediately compensated by the introduction of more dislocations. However, the fitted values of the Burgers vectors b are about a factor of 10-100 larger than the feẘ A typically reported for oxides [32][33][34]. Assuming b = 5Å, σ (h c ) = F , and h c = h max in the MB model, the stress would relax much faster and, a few nanometers above h max it would be much smaller than the measured values.…”

Section: Stress Relaxation and Growth Mechanismmentioning

confidence: 64%

“…with the Poisson ratio ν, and γ and η describing the geometry of the dislocation line [26]. The Burgers vector b is the second fitting variable; in oxides, values of ∼1-10Å are reported [32][33][34]. The MML model [27] is also based on Frank and van der Merwe's work [31].…”

Section: Introductionmentioning

confidence: 99%

Stress generation and evolution in oxide heteroepitaxy

et al. 2018

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Many physical properties of oxides can be changed by inducing lattice distortions in the crystal through heteroepitaxial growth of thin films. The average lattice strain can often be tuned by changing the film thickness or using suitable buffer layers between film and substrate. The exploitation of the full potential of strain engineering for sample or device fabrication rests on the understanding of the fundamental mechanisms of stress generation and evolution. For this study an optical measurement of the substrate curvature is used to monitor in situ how the stress builds up and relaxes during the growth of oxide thin films by pulsed laser deposition. The relaxation behavior is correlated with the growth mode, which is monitored simultaneously with reflection high-energy electron diffraction. The stress relaxation data is fitted and compared with theoretical models for stress evolution which were established for semiconductor epitaxy. The initial stage of the growth appears to be governed by surface stress and surface energy effects, while the subsequent stress relaxation is found to be fundamentally different between films grown on single-crystal substrates and on buffer layers. The first case can be rationalized with established theoretical models, but these models fail in the attempt to describe the growth on buffer layers. This is most probably due to the larger average density of crystalline defects in the buffer layers, which leads to a two-step stress relaxation mechanism, driven first by the nucleation and later by the migration of dislocation lines.

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“…The objective lens aperture can only select one diffraction spot at once, that is, a single reciprocal g vector is selected. In this situation, taking dislocations as an example, one will not see any contrast if the dislocation Burgers vector b meets the so‐called extinction criterion g · b = 0 (Williams & Carter, 2009; Yu, Zhang, Yang, Wang, & Zhao, 2012). This is because the diffracting planes are then parallel to the displacement vector of the local displacement field, hence, the corresponding dislocation disappears in the image even if it really exists.…”

Section: Introductionmentioning

confidence: 99%

Rapid defect characterization: The efficiency of diffraction contrast‐scanning transmission electron microscopy

Wang

Shi

et al. 2020

Microscopy Res & Technique

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Defect information is critical for both fundamental research and industrial analysis of metals and semiconductors. Diffraction contrast is the basis for defect imaging using either X-ray or electron microscopy. Taking the advantage of high resolution in electron microscopy techniques, here we evaluate the efficiency for diffraction contrast imaging based on scanning transmission electron microscopy. The working principle and application are demonstrated using the typical semiconductor material silicon as an example. The efficiency is improved at least an order of magnitude compared with conventional electron microscopy method.

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Microstructure and strain relaxation of orthorhombic TmMnO3 epitaxial thin films

Cited by 5 publications

References 17 publications

Multiferroic RMnO3 thin films

Multiferroic RMnO3 thin films

Stress generation and evolution in oxide heteroepitaxy

Rapid defect characterization: The efficiency of diffraction contrast‐scanning transmission electron microscopy

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