Microstructure and Photoluminescence Study of ZnO Films Prepared by Thermal Oxidation of Zn Metallic Films in Air

Abstract

In this thesis, Zn films were deposited on silicon substrates by high-speed galvanization, and then were treated in Muffle Resistance Furnace at 700°Cin an open-air environment. Polycrystalline ZnO films covered with ZnO nanorods were grown. Its morphologies were studied by SEM and its crystal structures were studied by XRD．Its photoluminescence spectrum was also measured．And possible mechanisms of the growth and the photoluminescence of ZnO nanorods were proposed to explain the experimental result．

Enhancement and tailoring of photoluminescence by the use of metallic nanostructures

“…The wide and direct bandgap (~3.37 eV) and the high binding energy (60 meV) [81] of ZnO make it a very attractive material for optoelectronic and ultraviolet (UV) laser devices [369,370]. Up to now a large number of studies about the photoluminescence (PL) properties of ZnO, fabricated with several techniques, have been published [371,372]. It is well established that the ZnO PL spectrum is composed of two significant emission peaks, a narrow ultra-violet (UV) peak (around 380 nm), that can be correlated with near-band-edge (NBE) exciton emission [3], and a broad visible peak (from 450 to 750 nm), associated with deep level emission (DLE) that comes from several defects in the ZnO structure [184].…”