Microstructure and Nonohmic Properties of SnO2-Ta2O5-ZnO System Doped with ZrO2

Fu, Xiuli; Jiang, Feng; Gao, Ruichao; Peng, Zhijian

doi:10.1155/2014/754890

Cited by 5 publications

(3 citation statements)

References 18 publications

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“…On the tracing paper condition, a splitting of the XRD peak corresponding to the crystallographic plane (002) is observed, and it might be due to the peak doublet of K-alpha 1 and K-alpha 2 [ 52 ].…”

Section: Resultsmentioning

confidence: 99%

Ultra-Fast Microwave Synthesis of ZnO Nanorods on Cellulose Substrates for UV Sensor Applications

et al. 2017

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In the present work, tracing and Whatman papers were used as substrates to grow zinc oxide (ZnO) nanostructures. Cellulose-based substrates are cost-efficient, highly sensitive and environmentally friendly. ZnO nanostructures with hexagonal structure were synthesized by hydrothermal under microwave irradiation using an ultrafast approach, that is, a fixed synthesis time of 10 min. The effect of synthesis temperature on ZnO nanostructures was investigated from 70 to 130 °C. An Ultra Violet (UV)/Ozone treatment directly to the ZnO seed layer prior to microwave assisted synthesis revealed expressive differences regarding formation of the ZnO nanostructures. Structural characterization of the microwave synthesized materials was carried out by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The optical characterization has also been performed. The time resolved photocurrent of the devices in response to the UV turn on/off was investigated and it has been observed that the ZnO nanorod arrays grown on Whatman paper substrate present a responsivity 3 times superior than the ones grown on tracing paper. By using ZnO nanorods, the surface area-to-volume ratio will increase and will improve the sensor sensibility, making these types of materials good candidates for low cost and disposable UV sensors. The sensors were exposed to bending tests, proving their high stability, flexibility and adaptability to different surfaces.

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Section: Resultsmentioning

confidence: 99%

Ultra-Fast Microwave Synthesis of ZnO Nanorods on Cellulose Substrates for UV Sensor Applications

et al. 2017

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“…The impurities in Zinc Oxide matrix are known to be the crucial factors to control the microstructure and electrical properties of ZnO-based varistor, TiO 2 , MnO 2 which are the most significant dopants in terms of their effects on varistor performance [6][7]. The characteristics of varistor can also be improved by adding semiconductor additives.…”

Section: Introductionmentioning

confidence: 99%

Study of the Behavior of 3d-Shell Electrons in ZnO Based Varistors Doped with Semiconductor Additives

Yang

Zhu

Wei³

et al. 2015

AMM

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The behavior of 3d-shell electrons in ZnO-based varistors doped with semiconductor additives has been investigated. The 3d-shell electron details of the varistors can be extracted by a two-detector coincidence system of the Doppler broadening of positron annihilation radiation. It has been found that the 3d electron signal in semi-Z doped varistors is relatively high as compared with other varistors. The nonlinear coefficient of the sample decreases with the d-d interaction, and the leakage current of the specimen increases with the d-d interaction.

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“…The additives in ZnO matrix are known to be the key factors to control the microstructure and electrical properties of ZnO-based varistors [6][7][8]. The main and most important additive is Bi 2 O 3 , which is directly responsible for varistor non-ohmic behavior and affects the varistor electrical properties indirectly by means of promoting zinc oxide grain growth in the sintering process.…”

Section: Introductionmentioning

confidence: 99%

Positron Annihilation in ZnO Based Varistor Doped with Semiconductor Additives

Yang

Zhu

Wei³

et al. 2015

AMM

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Coincidence Doppler broadening spectra measurements on ZnO-based varistor doped with semiconductor additives have been investigated, and the proposed samples exhibit different characteristics. The peak of the ratio curve of pure zinc is the highest, the Positron Lifetime in sample a03 doped with ZT is the longest. The maximum probability of the positron-3d electron occurs in sample doped with semi-ZnO (sintered at 1300 °C for 2h with conventional ceramic processing method). The electrical characteristics of the samples and the behavior of positrons in ZnO-based varistor have been discussed.

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Microstructure and Nonohmic Properties of SnO₂-Ta₂O₅-ZnO System Doped with ZrO₂

Cited by 5 publications

References 18 publications

Ultra-Fast Microwave Synthesis of ZnO Nanorods on Cellulose Substrates for UV Sensor Applications

Ultra-Fast Microwave Synthesis of ZnO Nanorods on Cellulose Substrates for UV Sensor Applications

Study of the Behavior of 3d-Shell Electrons in ZnO Based Varistors Doped with Semiconductor Additives

Positron Annihilation in ZnO Based Varistor Doped with Semiconductor Additives

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