Abstract:High-quality YBa2Cu3O7-δ thin films have been grown on CaNdAlO4 (001) substrates by in situ laser ablation. The best transition temperature determined by AC susceptibility midpoint was 88.3 K with a critical current density of 1.0×106 A/cm2 at 77 K. The full width at half maximum of the X-ray rocking curve of the YBCO (004) peak was 0.33°. The film crystallinity was slightly worse than those grown on LaAlO3 and NdGaO3 judging from electron channeling pattern. A 2.3 GHz resonator made from a YBCO film on CaNdAl… Show more
“…The ECP quality for various substrates at different electron energies has been studied and will be published elsewhere. 16 The schematic illustration of the c-axis ECP is shown in Fig. 3(b); for simplicity, we illustrated only the details in the third quadrant.…”
We have studied the electron channeling patterns (ECPs) of both pure a-axis and pure c-axis epitaxial YBa 2 Cu 3 0 7 _6 thin films on various substrates. ECPs from three representative a-axis films [on PrBa 2 Cu 3 0 7 _^ buffered LaA10 3 (001), MgO (001), and SrLaA10 4 (001)] and three c-axis films [on LaAlO 3 (001), NdGaO 3 (001), and SrTiO 3 (001)] are presented. The differences between both sets of ECPs are discussed and recorded as references for future identifications.
“…The ECP quality for various substrates at different electron energies has been studied and will be published elsewhere. 16 The schematic illustration of the c-axis ECP is shown in Fig. 3(b); for simplicity, we illustrated only the details in the third quadrant.…”
We have studied the electron channeling patterns (ECPs) of both pure a-axis and pure c-axis epitaxial YBa 2 Cu 3 0 7 _6 thin films on various substrates. ECPs from three representative a-axis films [on PrBa 2 Cu 3 0 7 _^ buffered LaA10 3 (001), MgO (001), and SrLaA10 4 (001)] and three c-axis films [on LaAlO 3 (001), NdGaO 3 (001), and SrTiO 3 (001)] are presented. The differences between both sets of ECPs are discussed and recorded as references for future identifications.
“…In light of the discovery of high temperature superconductivity [2] in the system La 2−x M x CuO 4 (M=Ba, Sr, Ca), it is interesting to investigate other oxides possessing the K 2 NiF 4 structure. Recently, MRAlO 4 (M=Sr, Ca; R=La, Nd, Sm and Y) crystals and ceramics with K 2 NiF 4 structure have attracted much scientific attention because of their interesting dielectric characteristics and their potential applications as substrates [3][4][5][6]. Moreover, these materials have been studied as good candidates of microwave dielectric materials in our group [7,8].…”
SrNdCoO 4 ceramics with tetragonal K 2 NiF 4 structure were prepared by a solid-state reaction process. The frequency and temperature dependence of dielectric and conductive properties were studied. A peak was found at ∼325°C on both dielectric constant (ɛ) and conductivity (σ) plots with temperature. After annealing in O 2 , the peak of ɛ disappeared while that of σ just shifted a little toward high temperature side. So, some oxide vacancies existed in the polycrystalline SrNdCoO 4 , which contributed much to ɛ but influenced σ only slightly in the measured temperature and frequency range. A lower resistivity of 3.7 Ωcm was obtained in SrNdCoO 4 ceramics sintered at 1150°C.
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