Abstract:High-quality epitaxial Tl2Ba2CaCu2O8 superconducting thin films have been grown on NdGaO3(001) by a two step process. One film, annealed at 850°C, shows interdiffusion of Ga by secondary ion mass spectroscopy, resulting in an incomplete AC susceptibility transition at 80 K. For films annealed at lower temperature, excellent crystallinity and transport properties were obtained. Ground plane substitution of the film in a 5 GHz microstrip resonator indicated worse microwave performance than similar films on LaAlO… Show more
“…8) indicates that only a small fraction of the film consists of these grains, which are about 0.1 mm in length. In the previous study by Young etal., 12 the majority of the film surface was covered with a-axis oriented grains, compared to less than 5% of the surface in this study.…”
Section: Ndgaocontrasting
confidence: 58%
“…In one previous study of Tl 2 Ba 2 CaCu 2 0 8 on LaA10 3 , the rocking curve full width at half maximum has been reported to be as narrow as 0.3 °, 8 although the same group has reported values to be more typically in the range O.8-1.O 0 . 12 The T c of the Tl 2 Ba 2 CaCu 2 0 8 film on LaA10 3 was measured inductively and by ac magnetic susceptibility to be 103 K. In previous studies T c has been reported to be 102 K, 8 103 K, 7 and 106.5 K. 6 The narrow transition width in the inductive measurement of T c is the signature of a high quality film with few weak junctions between grains. SNMS analysis gave no indication of any reaction between the film and the substrate.…”
Superconducting Tl 2 Ba 2 CaCu2O8 films were prepared by a two-step postdeposition anneal process under identical conditions on a number of single crystal substrates: (100) LaA10 3 , (100) NdGaO 3 , (100) LaGaO 3 , (100) SrTiO 3 , (100) MgO, and (0001) A1 2 O 3 . The properties of the resulting Tl 2 Ba 2 CaCu 2 0 8 films were strongly dependent on the substrate. Films on all substrates were predominantly c-axis oriented. Films prepared on LaA10 3 , NdGaO 3 , and LaGaO 3 also exhibited in-plane epitaxy, while films on MgO, A1 2 O 3 , and SrTiO 3 were not aligned with the substrates. Some a-axis oriented grains of Tl 2 Ba 2 CaCu 2 0 8 formed on NdGaO 3 and both a-axis oriented grains and cracks were present on LaGaO 3 . Large amounts of secondary phases, as indicated by additional peaks in the x-ray diffraction scans, were observed for films on A1 2 O 3 and SrTiO 3 and smaller amounts on each of the other substrates. Depth profiling by sputtered neutral mass spectroscopy (SNMS) confirmed the presence of strong film-substrate reactions on A1 2 O 3 and SrTiO 3 , and also indicated the presence of a reaction on NdGaO 3 . The T c onset of the films as measured both inductively and by ac magnetic susceptibility varied depending on the substrate. The highest quality films were prepared on LaA10 3 . NdGaO 3 may also prove to be an acceptable substrate if the nucleation and growth of a-axis oriented Tl 2 Ba 2 CaCu 2 0 8 grains can be eliminated. The remaining substrates appear to be less suitable due to severe film-substrate interactions, lack of epitaxial growth, or crystallographic phase changes.
“…8) indicates that only a small fraction of the film consists of these grains, which are about 0.1 mm in length. In the previous study by Young etal., 12 the majority of the film surface was covered with a-axis oriented grains, compared to less than 5% of the surface in this study.…”
Section: Ndgaocontrasting
confidence: 58%
“…In one previous study of Tl 2 Ba 2 CaCu 2 0 8 on LaA10 3 , the rocking curve full width at half maximum has been reported to be as narrow as 0.3 °, 8 although the same group has reported values to be more typically in the range O.8-1.O 0 . 12 The T c of the Tl 2 Ba 2 CaCu 2 0 8 film on LaA10 3 was measured inductively and by ac magnetic susceptibility to be 103 K. In previous studies T c has been reported to be 102 K, 8 103 K, 7 and 106.5 K. 6 The narrow transition width in the inductive measurement of T c is the signature of a high quality film with few weak junctions between grains. SNMS analysis gave no indication of any reaction between the film and the substrate.…”
Superconducting Tl 2 Ba 2 CaCu2O8 films were prepared by a two-step postdeposition anneal process under identical conditions on a number of single crystal substrates: (100) LaA10 3 , (100) NdGaO 3 , (100) LaGaO 3 , (100) SrTiO 3 , (100) MgO, and (0001) A1 2 O 3 . The properties of the resulting Tl 2 Ba 2 CaCu 2 0 8 films were strongly dependent on the substrate. Films on all substrates were predominantly c-axis oriented. Films prepared on LaA10 3 , NdGaO 3 , and LaGaO 3 also exhibited in-plane epitaxy, while films on MgO, A1 2 O 3 , and SrTiO 3 were not aligned with the substrates. Some a-axis oriented grains of Tl 2 Ba 2 CaCu 2 0 8 formed on NdGaO 3 and both a-axis oriented grains and cracks were present on LaGaO 3 . Large amounts of secondary phases, as indicated by additional peaks in the x-ray diffraction scans, were observed for films on A1 2 O 3 and SrTiO 3 and smaller amounts on each of the other substrates. Depth profiling by sputtered neutral mass spectroscopy (SNMS) confirmed the presence of strong film-substrate reactions on A1 2 O 3 and SrTiO 3 , and also indicated the presence of a reaction on NdGaO 3 . The T c onset of the films as measured both inductively and by ac magnetic susceptibility varied depending on the substrate. The highest quality films were prepared on LaA10 3 . NdGaO 3 may also prove to be an acceptable substrate if the nucleation and growth of a-axis oriented Tl 2 Ba 2 CaCu 2 0 8 grains can be eliminated. The remaining substrates appear to be less suitable due to severe film-substrate interactions, lack of epitaxial growth, or crystallographic phase changes.
“…Oxide materials of general composition ABCO 4 (where A ¼ Ca, Sr, Ba, B ¼ La, Nd, Pr and C ¼ Al, Ga) with the tetragonal perovskite-related K 2 NiF 4 -type structure are considered promising substrate materials for high-temperature superconducting (HTSc) thin films, elements of thermal radiation receivers and other electronic devices due to their electrochemical and thermal properties and good lattice matching [1][2][3][4][5][6][7][8]. Crystals of high structural quality are required for such applications so the characterisation of crystal lattice defects is of great importance.…”
a b s t r a c tA Ca 0.5 Sr 0.5 NdAlO 4 single crystal grown by the Czochralski method in the [1 0 0] direction was investigated by means of conventional projection X-ray topography, and by means of synchrotron white beam and monochromatic beam topography.The topographic investigation revealed growth striations with strong black diffraction contrasts distributed periodically in the form of concentric rings, and a significant number of resolved defects. Some of these defects seem to be associated with precipitates, while others form linear diffraction contrasts located perpendicularly to the striation stripes. The last category of defects can be somehow associated with dislocations, but provides much more intense and complex diffraction contrast that can be expected for individual dislocations.A significant lattice deformation associated with striation was revealed with some of the synchrotron topographic methods, particularly back-reflection white beam topography with fine mesh placed behind the crystal and transmission synchrotron section topography, where a characteristic bending of the section image was observed. The transmission section topographs provided also good visibility of segregation fringes in the plane intersected by the beam, corresponding to the subsequent positions of the growth surface.
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