Microstructure and mechanical properties of SiCN hard films deposited by an arc enhanced magnetic sputtering hybrid system

Silicon Carbonitride (SiCN) Films by Remote Hydrogen Microwave Plasma CVD from Tris(dimethylamino)silane as Novel Single‐Source Precursor

“…They are promising coating materials in advanced technology. Most recent reports [1][2][3][4][5][6] revealed many unique features of SiCN films which may be used as hard, dense, and high temperatureand corrosion-resistant coatings for metals (giving excellent tribological behavior), as well as highly selective gas separation membranes. [7] Of the various methods based on the gas-phase processes which are used for the formation of SiCN films, remote microwave plasma (RP)CVD from organosilicon precursors, developed in our laboratory, appeared to be a very useful technique, offering wellcontrolled deposition conditions free of film-damaging effects.…”

Influence of trimethylsilane flow on the microstructure, mechanical and tribological properties of CrSiCN coatings in water lubrication

“…In addition, the diffraction peaks (2 0 0) shifted to higher angles with the increasing of TMS flows, which corresponds to a progressive reduction of the lattice parameter, suggests the incorporation of Si into the cubic CrN structure [48,52,53]. In addition, the diffraction peaks (1 1 1) and (2 2 0) disappeared as a result of amorphous structure and lower residual stress [56], which is due to the substitution of smaller Si atoms for Cr sites in the CrN lattice [54], and then leads to the distortion of the CrN lattices [53]. According to the Scherrer's equation expressed as: D = 0.9 /(ˇ cos Â), where D is the mean crystallite size, is the X-ray wavelength, ␤ is the peak width at half the maximum intensity (FWHM), and  is the Bragg's angle.…”

Effects of the amount of Si rings on the phase separation and crystallization of silicon-rich SiO2 thin films

“…The Si 2p spectra of samples have been deconvoluted into the five possible oxidation states (Si 0 , Si 1+ , Si 2+ , Si 3+ and Si 4+ ). The energy [25][26][27][28]. When the thin films annealed at RT -400 • C, the peaks of Si 4+ and O 2− were weak, whereas the peaks of Si 0 and O 4/x− were intensive, which indicated that most of the Si Si x O 4−x (1 < x < 3) clusters were in the thin films.…”