Microstructure and ferroelectric properties of epitaxial BaTiO3/SrRuO3/SrTiO3 (001) films grown by pulsed laser deposition under high oxygen pressure

Wang, X.W.; Wang, X.; Gong, Wenyu; Zhang, Yi‐Qi; Zhu, Yong-Yuan; Wang, Z.J.; Zhang, Z.D.

doi:10.1016/j.tsf.2011.12.025

Cited by 16 publications

(8 citation statements)

References 25 publications

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“…Such relaxation of large misfit strain is known to proceed through the formation of a nanocolumnar microstructure during Stranski-Krastanov epitaxial growth [55]. The resulting low-angle columnar boundaries do not destroy epitaxial relationships [55][56][57][58][59]. Consistent with the previous observations, epitaxial nanocolumns with lateral dimensions of 50-70 nm are also found in the PSN films [Figs.…”

Section: A Crystal Structuresupporting

confidence: 86%

Hybrid polar state in epitaxial (111) PbSc0.5Nb0.5O3 relaxor ferroelectric films

Peräntie

Savinov

Kocourek

et al. 2019

Phys. Rev. Materials

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In relaxor ferroelectrics, the interplay between the short-range-order dipolar state and long-range-order ferroelectric state leads to outstanding response functions, which enable valuable capacitor, electromechanical, pyroelectric, and electrocaloric applications. Advanced applications are envisaged with epitaxial relaxor ferroelectric films, whose fundamentals are still poorly explored. In particular, frustration of ferroelectricity, contrasting the bulk behavior, has been found and ascribed to nonpolar crystal orientation in (001) epitaxial films of archetypical lead-based relaxors. Here, a peculiar hybrid polar state, where coexisting long-range and short-range orders persist to very low temperatures, is demonstrated in epitaxial polar-oriented (111) PbSc 0.5 Nb 0.5 O 3 films. The hybrid state is evidenced by relaxorlike frustrations of ferroelectric transition and the Curie-Weiss behavior, validity of the Vogel-Fulcher relationship, a non-Rayleigh dynamic nonlinearity, and a ferroelectriclike low-temperature polarization. Local fluctuations of lattice strain arising from the relaxation of large epitaxial misfit are suggested to be responsible for the hybrid polar state. Introducing strain fluctuations by doping or nanostructuring is anticipated to boost the dynamic dielectric and piezoelectric performance of many perovskite oxide ferroelectrics.

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Section: A Crystal Structuresupporting

confidence: 86%

Hybrid polar state in epitaxial (111) PbSc0.5Nb0.5O3 relaxor ferroelectric films

Peräntie

Savinov

Kocourek

et al. 2019

Phys. Rev. Materials

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“…On the other hand, the in-plane parameter has a non-monotonous behavior with growth pressure. Nevertheless, the former is here always found greater than the latter, as illustrated through the c/a ratio at the top of Figure 1c, and in agreement with previous studies for BTO grown on SRO/STO [11,18]. The BTO layer is thus c-axis oriented on the whole investigated pressure range.…”

Section: Structural Analysissupporting

confidence: 92%

“…This change of growth orientation is also observed on a MgO substrate [15]. However, when an epitaxial SrRuO 3 (SRO) metallic electrode is inserted between the insulating STO substrate and the BTO ferroelectric layer, the latter is then always found c-axisoriented [11], even after growth at the high oxygen pressure of 230 mTorr [18]. Still, both tetragonality (c/a ratio) and outof-plane lattice parameter (c, with a the in-plane one) do decrease with increasing oxygen pressure during growth of BTO on SRO/STO [11].…”

Section: Introductionsupporting

confidence: 54%

Tuning the growth and strain relaxation of ferroelectric BaTiO₃ thin films on SrRuO₃ electrode: influence on electrical properties

Aidoud

Maroutian

Matzen

et al. 2017

Eur. Phys. J. Appl. Phys.

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This study is focused on the link between the structural and electric properties of BaTiO 3 thin films grown on SrRuO 3 -buffered (001) SrTiO 3 substrates, SrRuO 3 acting as bottom electrode. The growth regime and film structure are here tuned through the growth pressure for pulsed laser deposition in the 1-200 mTorr range. The dielectric, ferroelectric and leakage current properties are systematically measured for the different strain states of the BaTiO 3 thin films on SrRuO 3 . The results are discussed with the help of ab initio calculations on the effects of Ba-and Ti-vacancies on BaTiO 3 lattice parameters. A sharp increase of the dielectric constant is evidenced in the high pressure region, where the tetragonality of the BaTiO 3 is decreasing rapidly with growth pressure. We interpret this divergence of the dielectric function as the signature of the vicinity of the phase boundary between the out-of-plane and in-plane orientations of the tetragonal BTO films.*

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“…In contrast, the polarizability of our B12ZT and B20ZT films is higher than that of the BT thin films at room temperature. This originates from the relatively low magnitude of P ( E ) of the BT films compared to typically observed values of other BT films or bulk samples . Additionally, the BT films of our previous studies, which were deposited in 0.01 mbar oxygen, showed a higher magnitude of P ( E ) and a more pronounced ferroelectric hysteresis .…”

Section: Resultsmentioning

confidence: 65%

BaZr_xTi_1−xO₃ Epitaxial Thin Films for Electrocaloric Investigations

et al. 2018

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Epitaxial BaZrxTi1−xO3 (BZT) thin films with a Zr content between x=0 and x=0.3 are grown by pulsed laser deposition on (001)‐oriented SrTiO3 single crystals utilizing a conducting SrRuO3 buffer layer and Pt top electrodes. An undisturbed epitaxial growth with a smooth and homogeneous surface structure is obtained for all Zr containing films, whereas some preferentially growing grains and twins are observed for pure BaTiO3 films. Temperature‐dependent measurements of the relative permittivity suggest a diffuse phase transition. The temperature of the maximum permittivity as well as the electrical polarizability at room temperature decrease with increasing Zr content. The observed frequency dependence suggests relaxor ferroelectric properties for all Zr‐containing films. The indirectly determined electrocaloric responses are considerably lower compared to thick films, which is primarily attributed to the diffuse character of the phase transition. A maximum adiabatic temperature change of about 0.3 K for an electric field change of 170 kV cm−1 is found for BaZr0.2Ti0.8O3.

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Microstructure and ferroelectric properties of epitaxial BaTiO3/SrRuO3/SrTiO3 (001) films grown by pulsed laser deposition under high oxygen pressure

Cited by 16 publications

References 25 publications

Hybrid polar state in epitaxial (111) PbSc0.5Nb0.5O3 relaxor ferroelectric films

Hybrid polar state in epitaxial (111) PbSc0.5Nb0.5O3 relaxor ferroelectric films

Tuning the growth and strain relaxation of ferroelectric BaTiO₃ thin films on SrRuO₃ electrode: influence on electrical properties

BaZr_xTi_1−xO₃ Epitaxial Thin Films for Electrocaloric Investigations

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Microstructure and ferroelectric properties of epitaxial BaTiO3/SrRuO3/SrTiO3 (001) films grown by pulsed laser deposition under high oxygen pressure

Cited by 16 publications

References 25 publications

Hybrid polar state in epitaxial (111) PbSc0.5Nb0.5O3 relaxor ferroelectric films

Hybrid polar state in epitaxial (111) PbSc0.5Nb0.5O3 relaxor ferroelectric films

Tuning the growth and strain relaxation of ferroelectric BaTiO3 thin films on SrRuO3 electrode: influence on electrical properties

BaZrxTi1−xO3 Epitaxial Thin Films for Electrocaloric Investigations

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Tuning the growth and strain relaxation of ferroelectric BaTiO₃ thin films on SrRuO₃ electrode: influence on electrical properties

BaZr_xTi_1−xO₃ Epitaxial Thin Films for Electrocaloric Investigations