Microstructure and electronic properties of microcrystalline silicon carbide thin films prepared by hot-wire CVD

Chen, T.; Köhler, Florian; Heidt, Anna; Huang, Yuelong; Finger, F.; Carius, R.

doi:10.1016/j.tsf.2011.01.336

Cited by 27 publications

(25 citation statements)

References 26 publications

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“…This peak is still below that at 520 cm -1 of c-Si. We believe that the shift of Si-Si peak is due to the presence of ß-SiC crystalline phase with a density of vibration states which does not appear in the Raman spectrum of a-SiC according to the prescription of Smith [16]. The amount of these crystalline phases' increases under thermal annealing; therefore, this shift is the thermal annealing effect on the amorphous material.…”

Section: Raman Spectroscopymentioning

confidence: 93%

Effect of Thermal Annealing on the Optical and Structural Properties of the a-SiC Thin Films Deposited by DC Magnetron Sputtering

Merazga¹,

Keffous²,

Brighet³

et al. 2017

NanoWorld J

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Hydrogenated Amorphous silicon carbide (a-SiC:H) thin films were prepared by DC magnetron sputtering technique using 6H-SiC polycrystalline target in a mixture of H 2 and Ar gas. They were thermally annealed at various temperatures up to 800 °C. The a-SiC:H films were deposited at different hydrogen partial pressure rates varying from 0 to 9 sccm on p-type Si(100) and Corning glass 9075 substrates. The annealing temperatures were varied and the samples were characterized by Infrared spectroscopy (FTIR), Raman spectroscopy and Ellipsometry spectroscopy. The previous results of infrared and Raman spectroscopy reveal structural modifications in the material structure of the layers through a reduction of the thickness and optical gap and the variation of the refractive index during the annealing.

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Section: Raman Spectroscopymentioning

confidence: 93%

Effect of Thermal Annealing on the Optical and Structural Properties of the a-SiC Thin Films Deposited by DC Magnetron Sputtering

Merazga¹,

Keffous²,

Brighet³

et al. 2017

NanoWorld J

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“…More details on the deposition parameters can be found in Ref. [9]. The second series presented here was prepared using RF-PECVD with varying heater temperature T s between 200°C and 500°C, while other parameters were kept constant.…”

Section: Methodsmentioning

confidence: 99%

“…However, if prepared from e.g. a mixture of Monomethylsilane (MMS) and hydrogen, large variations in the electronic properties are observed when deposition conditions are altered [5][6][7][8][9][10]. It is feasible to link these changes -similarly as in microcrystalline silicon -to a change of the microstructure of the material e.g.…”

Section: Introductionmentioning

confidence: 99%

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Microstructure of hydrogenated silicon carbide thin films prepared by chemical vapour deposition techniques

Köhler

Chen

Nuys

et al. 2012

Journal of Non-Crystalline Solids

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“…These molecules have been explored as alternative single-source precursor molecules to replace the conventionally used SiH 4 −CH 4 mixture for the deposition of silicon carbide thin films using CVD. 16,17 The main advantages of using these single-source organosilicon molecules include reduced safety hazard, since there is no need to deal with the pyrophoric SiH 4 gas, and the possibility of preserving the Si-C bond in the deposited films. With DMS being used as a source gas, the intensity distributions of the three major product peaks from TriMS, 1,1,2,2-tetramethyldisilane (TMDS), and DMDSCB, respectively, was examined.…”

Section: Introductionmentioning

confidence: 99%

Effect of pressure on the gas-phase chemistry when using monomethylsilane and dimethylsilane in hot-wire chemical vapor deposition

ToukabriRim

ShiYujun

2015

Can. J. Chem.

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The effect of source gas pressure on the gas-phase reaction chemistry of dimethylsilane (DMS) and monomethylsilane (MMS) in the hot-wire chemical vapor deposition process has been studied by examining the secondary gas-phase reaction products in a reactor using a soft laser ionization source coupled with mass spectrometry. For DMS, the increase in sample pressure has resulted in the formation of small hydrocarbons, including ethene, acetylene, propene, and propyne. This leads to a switch from silylene dominant chemistry to a free radical dominant one with the pressure increase at low filament temperatures of 1200 and 1300°C. At the lower pressure of 0.12 Torr, the formation of 1,1,2,2-tetramethyldisilane by dimethylsilylene insertion reaction into the Si-H bond in DMS is favored over trimethylsilane produced from a free radical recombination reaction for a short reaction time. However, when the pressure is increased by 10 times, the gas-phase chemistry becomes dominated by the formation of trimethylsilane. We have demonstrated that trapping of the corresponding active intermediates by the small hydrocarbons produced in situ is responsible for the observed switch. In the study with MMS, the gas-phase chemistry is dominated by the formation of 1,2-dimethyldisilane and 1,3-disilacyclobutane at both pressures of 0.48 and 1.2 Torr. Unlike DMS, the gas-phase reaction chemistry with MMS does not involve free radicals, which are the precursors to produce small hydrocarbons. The absence of small hydrocarbons formed in situ with MMS explains the preservation in chemistry upon the increase in pressure when MMS is used as a source gas.Résumé : On a étudié dans un réacteur l'effet de la pression du gaz source sur la réaction en phase gazeuse du diméthylsilane (DMS) et du monométhylsilane (MMS) par un procédé de dépôt chimique en phase vapeur à fil chaud, en étudiant les produits secondaires dans la phase gazeuse au moyen d'un laser de faible puissance utilisé comme source d'ionisation et couplé avec un spectromètre de masse. Dans le cas du DMS, l'augmentation de la pression de l'échantillon a entraîné la formation d'hydrocarbures légers, notamment l'éthène, l'acétylène, le propène et le propyne. On en déduit que l'environnement chimique où la formation du silylène prédomine passe à un environnement chimique où la formation de radicaux libres prédomine dans lequel une augmentation de la pression s'est produite à de basses températures du filament (1200 et 1300°C). À la pression la plus faible (0,12 Torr), pendant un temps de réaction court, la formation du 1,1,2,2-tétraméthyldisilane par réaction d'insertion du diméthylsilylène dans le lien Si−H du DMS a été favorisée, par rapport à la formation du triméthylsilane issu de la réaction de recombinaison de radicaux libres. Toutefois, lorsque la pression était décuplée, la formation en phase gazeuse du triméthylsi-lane était prédominante. Nous avons démontré que le piégeage des intermédiaires réactifs par les hydrocarbures légers produits in situ est responsable du changement obse...

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Microstructure and electronic properties of microcrystalline silicon carbide thin films prepared by hot-wire CVD

Cited by 27 publications

References 26 publications

Effect of Thermal Annealing on the Optical and Structural Properties of the a-SiC Thin Films Deposited by DC Magnetron Sputtering

Effect of Thermal Annealing on the Optical and Structural Properties of the a-SiC Thin Films Deposited by DC Magnetron Sputtering

Microstructure of hydrogenated silicon carbide thin films prepared by chemical vapour deposition techniques

Effect of pressure on the gas-phase chemistry when using monomethylsilane and dimethylsilane in hot-wire chemical vapor deposition

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