Microstructure analysis of epitaxial BaTiO3 thin films on SrTiO3-buffered Si: Strain and dislocation density quantification using HRXRD methods

Borzì, Aurelio; Dolabella, Simone; Szmyt, Wojciech; Geler-Kremer, Jacqueline; Abel, Stefan; Fompeyrine, J.; Hoffmann, P.; Neels, Antonia

doi:10.1016/j.mtla.2020.100953

Cited by 21 publications

(17 citation statements)

References 23 publications

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“…Our results for the long annealing times are in qualitative agreement with this finding. We did not observe the very prominent increase of the LIDT as reported in [24], which is not surprising as we annealed at a lower temperature of 500°C instead of the 600 and 700°C marked as the optimal "high-temperature" annealing by Abromavicius et al Indeed the observed Scherrer-size indicates that HfO 2 crystallites are either very small or they are highly strained [38]. Irrespective of the origin of the line-broadening, the layers did not reach a relaxed, coarse-grained state.…”

Section: Laser-damage Testingsupporting

confidence: 66%

Crystallization behavior of ion beam sputtered HfO2 thin films and its effect on the laser-induced damage threshold

Balogh-Michels

Stevanovic

Borzì³

et al. 2021

J. Eur. Opt. Soc.-Rapid Publ.

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In this work, we present our results about the thermal crystallization of ion beam sputtered hafnia on 0001 SiO2 substrates and its effect on the laser-induced damage threshold (LIDT). The crystallization process was studied using in-situ X-ray diffractometry. We determined an activation energy for crystallization of 2.6 ± 0.5 eV. It was found that the growth of the crystallites follows a two-dimensional growth mode. This, in combination with the high activation energy, leads to an apparent layer thickness-dependent crystallization temperature. LIDT measurements @355 nm on thermally treated 3 quarter-wave thick hafnia layers show a decrement of the 0% LIDT for 1 h @773 K treatment. Thermal treatment for 5 h leads to a significant increment of the LIDT values.

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Section: Laser-damage Testingsupporting

confidence: 66%

Crystallization behavior of ion beam sputtered HfO2 thin films and its effect on the laser-induced damage threshold

Balogh-Michels

Stevanovic

Borzì³

et al. 2021

J. Eur. Opt. Soc.-Rapid Publ.

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“…Using the values of (α) as numerator in Equations ( 2) and (2a), the dislocation density can be estimated (Figure 12). [23]…”

Section: Williamson-hall and Modified Williamson-hall Methodsmentioning

confidence: 99%

“…In this regard, there are a number of analytical methods for separating the two components affecting the X-ray diffraction patterns. [23][24][25][26][27] High-resolution X-ray diffraction (HRXRD) is an extremely sensitive and non-destructive technique for determining the crystal lattice strain, [28][29][30][31][32][33][34][35] in semiconductors materials such as, silicon, germanium, gallium arsenide, and all elements belonging to the so-called "metalloid staircase" of the periodic table. As we will see in the next chapters of this article, lattice deformation is mainly caused by the presence of defects such as, dislocations and point defects.…”

Section: Doi: 101002/smtd202100932mentioning

confidence: 99%

Section: The Mosaicity Model and Rocking Curvesmentioning

confidence: 99%

“…After collecting (2θ/ω) scans, the average crystalline domain size (D) can be calculated from the well-known Scherrer's equation. [23,75,76] cos…”

Section: Scherrer and Modified-scherrermentioning

confidence: 99%

See 2 more Smart Citations

Lattice Strain and Defects Analysis in Nanostructured Semiconductor Materials and Devices by High‐Resolution X‐Ray Diffraction: Theoretical and Practical Aspects

et al. 2021

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The reliability of semiconductor materials with electrical and optical properties are connected to their structures. The elastic strain field and tilt analysis of the crystal lattice, detectable by the variation in position and shape of the diffraction peaks, is used to quantify defects and investigate their mobility. The exploitation of high‐resolution X‐ray diffraction‐based methods for the evaluation of structural defects in semiconductor materials and devices is reviewed. An efficient and non‐destructive characterization is possible for structural parameters such as, lattice strain and tilt, layer composition and thickness, lattice mismatch, and dislocation density. The description of specific experimental diffraction geometries and scanning methods is provided. Today's X‐ray diffraction based methods are evaluated and compared, also with respect to their applicability limits. The goal is to understand the close relationship between lattice strain and structural defects. For different material systems, the appropriate analytical methods are highlighted.

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Metal‐Organic Chemical Vapor Deposition of Oxide Perovskite Films: A Facile Route to Complex Functional Systems

Presti

Pellegrino

Malandrino

2022

Adv Materials Inter

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Perovskite oxide type materials exhibit a great profusion of unique functional properties and for this reason they have been named inorganic chameleon. Nevertheless, their actual applications require the availability of these systems in thin‐film form synthesized through a simple, scalable, and straightforward technique. Metal‐organic chemical vapor deposition (MOCVD) has been shown to be an outstanding process to prepare thin films of multi‐component oxides. Herein, the focus is devoted to oxide perovskite thin films on both single crystal and non‐single crystal substrates through MOCVD processes. This study discusses the principles and the basic rules governing conventional, plasma‐enhanced, and liquid‐assisted MOCVD processes. Among a plethora of oxide perovskites, several classes of functionalities belonging to the perovskite class: from superconductors to dielectrics and giant‐k dielectrics, from colossal magnetoresistance to ionic conductors, piezoelectrics and ferroelectrics, are explored in detail.

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Microstructure analysis of epitaxial BaTiO3 thin films on SrTiO3-buffered Si: Strain and dislocation density quantification using HRXRD methods

Cited by 21 publications

References 23 publications

Crystallization behavior of ion beam sputtered HfO2 thin films and its effect on the laser-induced damage threshold

Crystallization behavior of ion beam sputtered HfO2 thin films and its effect on the laser-induced damage threshold

Lattice Strain and Defects Analysis in Nanostructured Semiconductor Materials and Devices by High‐Resolution X‐Ray Diffraction: Theoretical and Practical Aspects

Metal‐Organic Chemical Vapor Deposition of Oxide Perovskite Films: A Facile Route to Complex Functional Systems

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