Microstructural Investigation and Magnetic Properties of p-type GaN Implanted with Mn+ Ions

Abstract

In p‐type GaN implanted with 5 × 1016 cm—2 dose of Mn+ ions, magnetization data after annealing showed ferromagnetic behavior at 10 K. The ferromagnetic signal for the sample annealed at 800 °C was stronger than the one at 900 °C, because of the predominant reaction of Mn with N atoms at 900 °C and the increase of the electron concentration with increasing annealing temperature. This suggests that ferromagnetism in Mn‐implanted p‐type GaN can be enhanced by optimising annealing temperature (< 900 °C).

Wide bandgap GaN-based semiconductors for spintronics

“…However, there are still strong variations in the reported magnetic behaviour, with some films exhibiting only paramagnetism and even those with ferromagnetism showing a wide range of apparent Curie temperatures (T C ) [31][32][33][34][35][36][37][38][39][40]. In particular, the origin of this ferromagnetism is not clear.…”