Microstructural Evolution of MOVPE Grown GaN by the Carrier Gas

The GaN Epilayer Grown by MOVPE: Effect of The Different Nucleation Layer Temperatures

“…at the same time [24]. Detailed information about the growth steps of GaN is mentioned elsewhere [18,25]. Figure 1 (a) demonstrates the optical reflectance curves of Samples A-D.…”

“…Many MOVPE studies have been shown the impact of growth parameters such as growth temperature, reactor pressure, annealing, growth rate, total carrier gas flow, V/III ratio (ratio between the partial pressures of V and III elements in the gas phase), etc. in both LT-GaN and HT-GaN growth [17][18][19][20][21][22]. M. S. Yi et al have focused on the structure of the GaN nucleation layers to investigate the effect of the growth temperature.…”

AlGaN/AlN MOVPE heteroepitaxy: pulsed co-doping SiH4 and TMIn

“…TMIn and SiH 4 were used as codoping sources. Prior to growth, sapphire substrates were thermally desorbed at 1100 °C for 10 min under H 2 ambient to remove surface contamination and adsorbed water [27]. A mixture of H 2 and N 2 was used as the carrier gas for the subsequent growth.…”

The Effect of Si (111) Substrate Surface Cleaning on Growth Rate and Crystal Quality of MOVPE Grown AlN

“…GaN has been the most popular compound of this group and after obtaining high crystal quality GaN, it was awarded the Nobel Prize in Physics in 2014 for its high brightness blue light emitting diodes (LEDs) studies [3]. It has attracted much attention to the applications of electronic and optoelectronic devices in many fields (daily life, defense industry, health, lighting, and energy) since this award [4]. Optoelectronic devices such as LEDs, laser diodes (LDs), solar cells, photodetectors and electronic devices such as high electron mobility transistors (HEMTs), high power pn diodes, Schottky diodes have been produced using III-N materials in recent years [5,6].…”