Microstructural evolution and hardness of rapidly solidified hypereutectic Al-Si surface layers by laser remelting

Abstract

A laser rapid solidification technique was employed to remelt and refine the microstructure of Al-25wt.%Si and Al-30wt.%Si alloyed layers produced by laser melting. The microstructure of the as-fabricated Al-Si layers consisted of irregular polygonal primary Si crystals of size 5 to 7 µm, fine α-Al dendrites, and Al-Si eutectic. Laser rapid remelting results showed a significant refinement of all the solidified phases with increasing scan speed and decreasing laser power. At the lowest laser power (800W), the sizes of the primary Si crystals were reduced to a sub-micron level and an interwoven network of nano-sized eutectic colonies was obtained. The higher cooling rates, resulted in a reduction in the amount of the α-Al phase especially those surrounding the primary Si, thereby stimulating the eutectic Si fibers to grow from the pre-existing primary Si crystals and increased the proportion of the fibrous eutectic. Transmission electron microscopy revealed fibrous eutectic, which was internally nano-twinned, with a diameter approaching as low as 10-15 nm for the highest cooling rate. The hardness measured by nanoindentation of the eutectic in the remelted Al-25wt.%Si layer increased with decreasing the eutectic spacing (ʎ) reaching a maximum value of 3.15GPa.

Effect of High-Frequency Electric Pulse on the Solidification Microstructure and Properties of Hypoeutectic Al-Si Alloy

“…Figure 10 illustrates the change curve of the friction curve and friction coefficient of hypoeutectic Al-9Si alloy after treatment with different pulse frequencies. The friction coefficient reflects the contact state between friction and wear materials [31], and its magnitude is influenced by load, contact area, and lubrication [32]. It is observed that the friction curve of the sample following high-frequency pulse treatment exhibits a stable and gradual trend, with an average value of the optimal friction coefficient at 0.3 ± 0.01.…”