Microstructural characterization of iron ion implantation of silicon carbide

Horton, L.L.; Bentley, J.; Romana, Laurence; Pérez, A.; McHargue, C.J.; McCallum, Jeffrey C.

doi:10.1016/0168-583x(92)95064-x

Cited by 35 publications

(4 citation statements)

References 5 publications

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“…Further the 57 Fe concentration profile (figure 3) results in a distribution of local neighbourhoods of Fe atoms (also in the core of the particles), which in addition to the effect of the particle size distribution contributes to the distribution P(QS). The P(QS) results at RT for our as-implanted samples are almost the same as in the work of McHargue and Horton [51,52], although the samples in [48] and [49] were implanted at RT (our samples were held at an elevated temperature of 350 • C during implantation) and no annealing procedure was applied afterwards. One can notice in table 2 that the average isomer shift δ of all samples at RT is positive and relatively small (about 0.12-0.13 mm s −1 ).…”

Section: Mössbauer Spectroscopy (Cems)mentioning

confidence: 54%

The origin of ferromagnetism in⁵⁷Fe ion-implanted semiconducting 6H-polytype silicon carbide

Stromberg

Keune

Chen

et al. 2006

J. Phys.: Condens. Matter

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Semiconducting (mostly p-doped) single crystals of the 6H-polytype of α-SiC(0001) were implanted with 57Fe ions with a nominal dose of 1.0 × 1016, 2.0 × 1016, 3.0 × 1016 or 2.0 × 1017 cm−2 (high-dose sample p-hd) at 100 or 200 keV ion energy in order to produce diluted magnetic semiconductors (DMSs). After implantation all samples (except p-hd) were subject to rapid thermal annealing at 1000 °C for 2 min. The structure was investigated by x-ray diffraction, high-resolution cross-sectional transmission electron microscopy and sputter-Auger depth profiling. The magnetic properties were obtained from superconducting quantum interference device (SQUID) magnetometry and 57Fe conversion electron Mössbauer spectroscopy (CEMS) at room temperature (RT) and 4.2 K. Our combined results obtained by several techniques prove unambiguously that ferromagnetism in 57Fe-implanted SiC for Fe concentrations above 3% originates mostly from epitaxial superparamagnetic Fe3Si (and possibly a small fraction of Fe nanoparticles) in the SiC matrix. We find a wide range of blocking temperatures, TB, which start from 400 K for a dose of 2.0 × 1016 cm−2, and shift downwards to ∼220 K for 3.0 × 1016 cm−2. For the lowest dose of 1.0 × 1016 cm−2 at 200 keV, we find evidence of ferromagnetism below 20 K via weak magnetic hyperfine interaction. Our measurements suggest that for a maximum Fe concentration in the range of 1–3%, which corresponds to this lowest Fe dose, the possibility exists to obtain a DMS in Fe-implanted SiC, prepared at lower or equal implantation doses.

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Section: Mössbauer Spectroscopy (Cems)mentioning

confidence: 54%

The origin of ferromagnetism in⁵⁷Fe ion-implanted semiconducting 6H-polytype silicon carbide

Stromberg

Keune

Chen

et al. 2006

J. Phys.: Condens. Matter

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“…On the contrary, nuclear shocks create many defects and cause the loss of the nanolamellar structure of Ti 3 SiC 2 , albeit without leading to amorphization like in the case of SiC for doses reaching some tenths of dpa [51][52][53][54][55][56][57]. It was shown that defect creation reduces dislocation mobility, and increases hardness [58].…”

Section: Discussionmentioning

confidence: 95%

Structural changes induced by heavy ion irradiation in titanium silicon carbide

Nappé¹,

Monnet²,

Grosseau³

et al. 2011

Journal of Nuclear Materials

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International audienceCarbide-type ceramics, which have remarkable thermomechanical properties, are sensed to manufacture the fuel cladding of Generation IV reactors that should work at high temperature. The MAX phases, and more particularly titanium silicon carbide, are distinguished from other materials by their ability to have some plasticity, even at room temperature. For this study, polycrystalline Ti3SiC2 was irradiated with ions of different energies, which allow to discriminate the effect of both electronic and nuclear interactions. After characterization by low-incidence X-ray diffraction and cross-sectional transmission electron microscopy, it appears that Ti3SiC2 is not sensitive to electronic excitations while nuclear shocks damage its structure. The results show the creation of many defects and disorder in the structure, an expansion of the hexagonal close-packed lattice along the c axis, and an increase in the microstrain yield

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“…24,[26][27][28][29][30] The range of reported recrystallization temperatures appears to be related to the variety of characterization equipment used. Typically, analysis of the postimplantation microstructure has been done via X-ray diffraction, 21,31 Rutherford backscattering spectroscopy in channeling mode (RBS-C), 24,27,[31][32][33][34] transmission electron microscopy (TEM), 19,21,35,36 or step height measurements utilizing surface metrology techniques. 20,24,26 In this analysis, TEM was used to evaluate focused ion beam (FIB) cross sections of the surface of Cs -implanted 3C-SiC as a function of annealing temperatures and times.…”

Section: Introductionmentioning

confidence: 99%

“…The range of reported recrystallization temperatures appears to be related to the variety of characterization equipment used. Typically, analysis of the postimplantation microstructure has been done via X‐ray diffraction, Rutherford backscattering spectroscopy in channeling mode (RBS‐C), transmission electron microscopy (TEM), or step height measurements utilizing surface metrology techniques …”

Section: Introductionmentioning

confidence: 99%

Recrystallization Kinetics of 3C Silicon Carbide Implanted with 400 keV Cesium Ions

et al. 2013

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Polycrystalline 3C silicon carbide (SiC) was implanted at room temperature with 400 keV cesium ions to a dose of 1016 ions/cm2. The samples were annealed at 600°C–1000°C for times up to 48 h to observe changes in the implantation zone crystallinity and density. The implanted regions were characterized by transmission electron microscopy (TEM) and secondary ion mass spectroscopy (SIMS) before and after annealing. It is shown that the implantation resulted in a 217 ± 2 nm amorphous region with microstructural damage extending to ~250 nm below the surface. Recrystallization of the amorphous region was observed to begin at 725°C. Densification was determined indirectly through changes in the measured implantation zone thickness. Measurable thickness, or densification, of the implanted region was not observed until temperatures greater than ~800°C. The SiC recrystallization began at the interface between the amorphous, damaged region, and the underlying polycrystalline material. Image analysis was used to quantify the fraction of crystalline phase as a function of time and temperature. The recrystallization kinetics exhibited Arrhenius dependency with an apparent activation energy of 480 kJ/mol. SIMS demonstrated that 60%–70% of the cesium was retained within the recrystallized microstructure after thermal annealing.

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Microstructural characterization of iron ion implantation of silicon carbide

Cited by 35 publications

References 5 publications

The origin of ferromagnetism in⁵⁷Fe ion-implanted semiconducting 6H-polytype silicon carbide

The origin of ferromagnetism in⁵⁷Fe ion-implanted semiconducting 6H-polytype silicon carbide

Structural changes induced by heavy ion irradiation in titanium silicon carbide

Recrystallization Kinetics of 3C Silicon Carbide Implanted with 400 keV Cesium Ions

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Microstructural characterization of iron ion implantation of silicon carbide

Cited by 35 publications

References 5 publications

The origin of ferromagnetism in57Fe ion-implanted semiconducting 6H-polytype silicon carbide

The origin of ferromagnetism in57Fe ion-implanted semiconducting 6H-polytype silicon carbide

Structural changes induced by heavy ion irradiation in titanium silicon carbide

Recrystallization Kinetics of 3C Silicon Carbide Implanted with 400 keV Cesium Ions

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The origin of ferromagnetism in⁵⁷Fe ion-implanted semiconducting 6H-polytype silicon carbide

The origin of ferromagnetism in⁵⁷Fe ion-implanted semiconducting 6H-polytype silicon carbide