Microstructural changes of Pt/Ti bilayer during annealing in different atmospheres — an XRD study

Ehrlich, Andreas; Weiß, Uwe; Hoyer, W.; Geßner, Thomas

doi:10.1016/s0040-6090(96)09452-7

Cited by 32 publications

(23 citation statements)

References 16 publications

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“…Previously, a similar but much stronger density decrease of the Pt layer in Pt/ Ti bilayer electrode upon the annealing was reported and attributed to the strong diffusion of Ti and its following oxidation. 21,22 Though the diffusion at the Pt/ TiO x interface was not strong 6,11 or even undetectable as reported, 18 the limited diffusion and incorporation of Ti and O into Pt have been observed previously [23][24][25][26] and confirmed by scanning transmission electron microscopy. 16 Ti and O can migrate along the grain boundaries of Pt when the sample is annealed.…”

Section: A Formation Of Pt Hillocks On the Bare Pt Electrodesupporting

confidence: 59%

Structural investigations of Pt∕TiOx electrode stacks for ferroelectric thin film devices

Cao

Solbach

Klemradt

et al. 2006

Journal of Applied Physics

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Effects of the thermal treatment and the fabrication process of Pb͑Zr 0.3 Ti 0.7 ͒O 3 ͑PZT͒ thin films using chemical solution deposition on Pt/ TiO x electrode stacks were investigated using complementary analytical techniques including atomic force microscopy ͑AFM͒, x-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, and grazing incidence x-ray reflectivity of synchrotron radiation. The surface and interface structures of the Pt/ TiO x electrode stacks with different thermal treatments, and the PZT/ Pt/ TiO x sample were examined. The propagation of Pt hillocks on the bare Pt/ TiO x electrode stacks upon the annealing was observed. AFM observations also revealed that the upper surface of the Pt bottom electrode under PZT thin film became rougher than that of the bare Pt electrode with the same thermal history. Global structural information including the density, surface or interface root-mean-square roughness, and thickness of each constituent layer in the samples were determined using x-ray reflectivity. A density decrease of the Pt layer upon the annealing or during the fabrication of PZT thin films was found from fitting the specular reflectivity, and further confirmed by the negative shift of the Yoneda peak of Pt in the diffuse reflectivity. The formation of Pt hillocks on the bare Pt electrodes was attributed to the compressive stress during the high-temperature annealing caused by the limited incorporation of Ti and O into the Pt layer. Roughening of the PZT/Pt interface was ascribed to the interaction between the compressive stress in Pt and the indentation by the PZT crystallization and grain growth during the annealing.

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Section: A Formation Of Pt Hillocks On the Bare Pt Electrodesupporting

confidence: 59%

Structural investigations of Pt∕TiOx electrode stacks for ferroelectric thin film devices

Cao

Solbach

Klemradt

et al. 2006

Journal of Applied Physics

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“…300 8C are well crystalline and are preferentially oriented along (1 1 1) direction. Sputtered Pt films on glass [8] or on Si substrates [1,9] are reported to grow preferentially along Pt(1 1 1) plane. In very thin (<100 nm) fcc metal films, (1 1 1) orientations form much more readily than other orientations [10,11].…”

Section: Methodsmentioning

confidence: 99%

Effect of substrate temperature and annealing temperature on the structural, electrical and microstructural properties of thin Pt films by rf magnetron sputtering

Sreemany

Sen

2006

Applied Surface Science

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“…Titanium diffuses through the Pt, which is consistent with electrode material studies by J.O. Olowolafe et al [139] and by A. Erlich et al [140]. Titanium diffused through the Pt and formed a TiO 2 dead layer with a lower dielectric constant than BST.…”

Section: Silicon Substratesupporting

confidence: 87%

“…Pt was therefore chosen for the electrode material since it is a noble metal and is known to be resistant to oxidation and corrosion [138]. Pt is known to have a poor adhesion to semiconductor and dielectric substrates [139,140]. CHARACTERIZATION AND OPTIMIZATION Therefore, glass-planarized alumina and thermally oxidized silicon require an adhesion layer to prevent delamination from the substrate [83].…”

Section: Metal Electrodesmentioning

confidence: 99%

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Thin fim barium strontium titanate capacitors for tunable RF frond-end applications

Tiggelman¹

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Microstructural changes of Pt/Ti bilayer during annealing in different atmospheres — an XRD study

Cited by 32 publications

References 16 publications

Structural investigations of Pt∕TiOx electrode stacks for ferroelectric thin film devices

Structural investigations of Pt∕TiOx electrode stacks for ferroelectric thin film devices

Effect of substrate temperature and annealing temperature on the structural, electrical and microstructural properties of thin Pt films by rf magnetron sputtering

Thin fim barium strontium titanate capacitors for tunable RF frond-end applications

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