Microstructural Analysis of Au/Ni/Al/Ti/Ta Ohmic Contact on AlGaN/GaN Heterostructure

Kim, Ki Hong; Jeon, Changwoo; Oh, Sang Ho; Park, Chan Gyung; Lee, Jun Young; Lee, Kyu Seok; Lee, Jong‐Lam

doi:10.1002/pssc.200390029

Search citation statements

Order By: Relevance

Paper Sections

Select...

Methods1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2008

Publication Types

Select...

Article1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

(1 citation statement)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Ta/Ti/Al/Ni/Au were deposited using an electron-beam evaporator, which was followed by rapid thermal annealing at 700 C for 30 s in N 2 ambient to form source/drain ohmic contacts. 6) Finally, Ni/Au for the gate were deposited using an electron-beam evaporator. The fabricated HFETs have a gate length of 1.2 mm and a gate width of 2 Â 60 mm.…”

Section: Methodsmentioning

confidence: 99%

Enhanced Electrical Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistor with p-GaN Back Barriers and Si Delta-Doped Layer

Lee

Hyun

Cho

et al. 2008

jjap

View full text Add to dashboard Cite

We present the electrical characteristics of an AlGaN/GaN/p-GaN heterostructure field-effect transistor (HFET) with a Si delta-doped layer. The p-GaN layer greatly improves buffer isolation (between neighboring mesas) in the AlGaN/GaN HFET and leads to effective carrier confinement. The Si delta-doped layer compensates not only the carrier depletion caused by the formation of a pn junction, but also even causes an increase in two-dimensional electron gas (2DEG) density. The proposed AlGaN/GaN HFET shows greatly improved electrical characteristics such as high drain current density and transconductance and low buffer and gate leakage currents compared with those of conventional AlGaN/GaN HFETs.

show abstract

Section: Methodsmentioning

confidence: 99%