Microstructural Analysis and Transport Properties of RuO₂-Based Thick Film Resistors

Abstract

RuO 2 -based low temperature sensors appear as very good secondary thermometers, mainly in the temperature range below 4.2 K. This is due to their high temperature sensitivity and small magnetoresistance. Both properties are strongly influenced by the manufacturing process (mainly by firing temperature and firing time). In our contribution we show that the microstructure of sensors and the temperature dependence of their resistance R(T ) down to 50 mK, in case when all sensors are prepared from the same paste, can be strongly influenced by change of the firing temperature from 800• C to 900 • C. The paper also presents results on the X-ray microanalysis and the analysis of electrical conductivity of these sensors.

On the Conduction Mechanism of Silicate Glass Doped by Oxide Compounds of Ruthenium (Thick Film Resistors). 3. The Minimum of Temperature Dependence of Resistivity

“…Electron microprobe analyses and atomic force microscope investigations [7] [41]- [43] of the interface of glass-RuO 2 show that there are the zone of higher concentration of Ru atoms in the glass round the RuO 2 particles. These zones are formed by diffusion of Ru atoms into the glass.…”

Interaction of RuO<sub>2</sub> and Lead-Silicate Glass in Thick-Film Resistors

“…Thick film resistors (TFR) are complex heterophase systems [1][2][3][4][5][6][7] having the following characteristic inhomogeneity scales:…”

Effect of Glass Composition on the Thermal Expansion of Relict Crystals of RuO<sub>2</sub> in Doped Lead-Silicate Glasses (Thick Film Resistors)

“…Based on previous studies [6][7][8] and investigations of properties of RuO 2 at T < 500 K, it is assumed that RuO 2 does not exhibit the same anomalies.…”