Microsensors for Magnetic Fields

Roumenin, Chavdar

doi:10.1007/978-3-540-33655-6_9

Cited by 25 publications

(14 citation statements)

References 63 publications

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“…Only in case of complete summing up of these Hall voltages could equality of the sensitivities in microsensors with orthogonal and parallel-field activation be achieved. If the parallel-field Hall device is deep enough, by using four separate sensing contacts only, H 1 -H 2 and H 3 -H 4 , located at the top side of the silicon chip, where one of the terminal pairs is located in the zone of the inside supply contacts [6,9,16], and the other terminal pair is located in the zone outside the supply electrodes [6,9,13], it is possible to achieve maximum sensitivity [15]. So far, in parallel-field Hall microsensors, the Hall voltage has been measured experimentally by two contacts, H 1 and H 2 , and in the elements with minimal design complexity -by one contact H [6,9,11,12,16].…”

Section: Concept Of the Novel Two-axis Hall Devicementioning

confidence: 99%

“…This is due to the fact that their behaviour is well predictable, because the action is controlled by only one clear galvanomagnetic effect. Many different versions of silicon 2D Hall microsensors are available featuring such drawbacks as channels cross-talk, offset, temperature and temporal drift [8][9][10]. A CMOS 2D parallel-field Hall magnetometer with minimal design complexity is also implemented, containing only 4 contacts [11].…”

Section: Introductionmentioning

confidence: 99%

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Angular position device with 2D low-noise Hall microsensor

Lozanova

Roumenin

2010

Sensors and Actuators A: Physical

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Section: Concept Of the Novel Two-axis Hall Devicementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Angular position device with 2D low-noise Hall microsensor

Lozanova

Roumenin

2010

Sensors and Actuators A: Physical

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“…The respective Hall field at must restore the initial position of the current in the substrate without induction . The parallel-field Hall microsensors were fabricated through various CMOS, BiCMOS, and micromachining technologies and were widespread in multiple applications [5]- [12]. Nevertheless, the relatively great number of leads for five-terminals devices require makes the minimization of the design complexity of the parallel-field Hall elements a challenge for their effective microsystem realization and applications.…”

Section: Introductionmentioning

confidence: 99%

Parallel-Field Silicon Hall Effect Microsensors With Minimal Design Complexity

Lozanova

Roumenin

2009

IEEE Sensors J.

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A new class of Hall microsensors with minimal design complexity was suggested and experimentally tested. The devices consisting in -Si substrate and three + -strip contacts only are sensitive to a magnetic field parallel to the chip surface. Using a reference voltage generating with a specific bridge circuitry, the linear Hall voltage is extracted and the quadratic geometrical magnetoresistance is fully compensated. The internal noise of the design with a Hall contact located outside the sensor active region is at least ten times smaller than those of the three-contact element with an inside placed output electrode. This leads to enhanced resolution reaching min 35 T. A three-terminal multisensors generating simultaneously and independently strongly asymmetric voltage to the magnetic field direction and a Hall signal were devised too. The devices performance proved undoubtedly that new three-contact sensors could compete with the other wellknown vertical Hall elements.

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“…Many different versions of 2D and 3D Hall microsensors are available for this purpose. Some of them [1][2][3][4] use measurement principles based on complex trigonometric calculation algorithm for angle evaluation. As a result, the angle extraction circuit is very complicated.…”

Section: Introductionmentioning

confidence: 99%

Angle Measurement and 3D Magnetic Field Sensing Using Circular Hall Microsensor

Lozanova

Noykov

Ivanov

et al. 2017

Proceedings of Eurosensors 2017, Paris, France, 3–6 September 2017

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Abstract:A new three-axis magnetometer for both 3-D magnetic field sensing and contactless in-plane 360° absolute angle encoding has been developed. The magnetometer is based on the Hall effect and consists of a circular in-plane sensitive CMOS Hall-effect microsensor, biasing and signal conditioning circuits. The sensing device contains a narrow n-well ring with a chain of contacts positioned radial on the ring. The signal conditioning circuit gives two output analogue signals: a voltage Vz, proportional to the magnetic field component Bz, and a sine wave function Vxy(t). The magnitude of the in-plane magnetic field B(x,y) is directly proportional to the sine amplitude and the phase Ψ corresponds to the angle between the applied in-plane magnetic field and a reference direction.

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Microsensors for Magnetic Fields

Cited by 25 publications

References 63 publications

Angular position device with 2D low-noise Hall microsensor

Angular position device with 2D low-noise Hall microsensor

Parallel-Field Silicon Hall Effect Microsensors With Minimal Design Complexity

Angle Measurement and 3D Magnetic Field Sensing Using Circular Hall Microsensor

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