Microscopy and Electrical Properties of Ge/Ge Interfaces Bonded by Surface-Activated Wafer Bonding Technology

Suga

2016

Elect Comm in Japan

SUMMARYLow-temperature bonding is an important fabrication technique for advanced microelectronics, microelectromechanical systems (MEMS), and optoelectronic devices. Recently, many low-temperature bonding techniques such as surface activated bonding have been studied in order to create unique device structures for a wide range of photonics applications. This paper focuses on low-temperature bonding techniques and reviews the state-of-the-art applications involving optoelectronic devices. C⃝

Section: Ge Far-infrared Detectorsupporting

confidence: 93%

Review of Low‐Temperature Bonding Technologies and Their Application in Optoelectronic Devices

Suga

2016

Elect Comm in Japan

“…15) Recently, the SAB of Ge wafers has also been reported for infrared detectors. [16][17][18][19][20][21] However, little work has focused on the effects of the bonding conditions on the mechanical and electrical properties and microstructure of the Ge/Ge bonded interface.…”

Section: Introductionmentioning

confidence: 99%

Room-temperature direct bonding of germanium wafers by surface-activated bonding method

Sasaki

Kurayama

et al. 2015

Jpn. J. Appl. Phys.

This paper reports the mechanical and electrical characteristics of Ge/Ge interfaces prepared by room-temperature surface-activated bonding (SAB). Bonded Ge/Ge wafer pairs with high bonding strength equivalent to that of the bulk material were achieved without any heat treatment. It was found that the bonding of Ge wafers was not sensitive to the background vacuum pressure in a wafer-bonding chamber compared with the bonding of Si wafers. The current-voltage characteristics and microstructures of bonded interfaces formed by SAB and low-temperature plasma activation bonding (PAB) were compared. It was demonstrated that junctions with very low resistivity can be obtained by SAB at room temperature.

“…16) Similar I-V characteristics of Ge=Ge prepared by SAB have been reported. 18) The existence of the thin GeO 2 layer increases the junction resistance. Therefore, bonding methods must be chosen carefully if low-resistance interfaces are to be expected.…”

Section: Ge Wafer Bonding For Photodetectorsmentioning

confidence: 99%

Heterogeneous integration based on low-temperature bonding for advanced optoelectronic devices

2018

Jpn. J. Appl. Phys.

Heterogeneous integration is an attractive approach to manufacturing future optoelectronic devices. Recent progress in low-temperature bonding techniques such as plasma activation bonding (PAB) and surface-activated bonding (SAB) enables a new approach to integrating dissimilar materials for a wide range of photonics applications. In this paper, low-temperature direct bonding and intermediate layer bonding techniques are focused, and their state-of-the-art applications in optoelectronic devices are reviewed. First, we describe the room-temperature direct bonding of Ge/Ge and Ge/Si wafers for photodetectors and of GaAs/SiC wafers for high-power semiconductor lasers. Then, we describe low-temperature intermediate layer bonding using Au and lead-free Sn-3.0Ag-0.5Cu solders for optical sensors and MEMS packaging.