Microscopic Reflection Difference Spectroscopy on Semiconductor Nanostructures

Koopmans, B.; Santos, P. V.; Cardona, M.

doi:10.1002/(sici)1521-396x(199812)170:2<307::aid-pssa307>3.0.co;2-z

Cited by 24 publications

(14 citation statements)

References 15 publications

(16 reference statements)

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“…14,15 Very recently, the important influence of the interface profile asymmetry on the optical anisotropy has been confirmed in CdTe-based CA QW's. 16 However, a systematic study of the role of the interfaces on the in-plane optical anisotropy of CA QW's was not attempted until now.…”

mentioning

confidence: 97%

Interface-related in-plane optical anisotropy inGaAs/Alx
Chen
¹
,
Ye
²
,
Wang
³

et al. 2002
Phys. Rev. B
36
0
45
2
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The in-plane optical anisotropies of a series of GaAs/Al x Ga 1Ϫx As single-quantum-well structures have been observed at room temperature by reflectance difference spectroscopy. The measured degree of polarization of the excitonic transitions is inversely proportional to the well width. Numerical calculations based on the envelope function approximation incorporating the effect of C 2v -interface symmetry have been performed to analyze the origin of the optical anisotropy. Good agreement with the experimental data is obtained when the optical anisotropy is attributed to anisotropic-interface structures. The fitted interface potential parameters are consistent with predicted values.

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mentioning

confidence: 97%

Interface-related in-plane optical anisotropy inGaAs/Alx
Chen
¹
,
Ye
²
,
Wang
³

et al. 2002
Phys. Rev. B
36
0
45
2
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“…Until now, there are two types of RDM setups reported. One is based on scanning confocal technique (Koopmans et al ., ) and the other is built upon a traditional optical microscope (Rotermund et al ., ). Koopmans integrated the RDS technique into a scanning confocal microscope and measured the optical anisotropy of GaAs/AlAs multiple quantum wells (Koopmans et al ., ).…”

Section: Introductionmentioning

confidence: 99%

Reflectance difference microscopy for nanometre thickness microstructure measurements

Huo

Shen

et al. 2018

Journal of Microscopy

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The discontinuity of medium at the boundary produces optically anisotropic response which makes reflectance difference microscopy (RDM) a potential method for nanometre-thickness microstructure measurements. Here, we present the methodology of RDM for the edge measurement of ultrathin microstructure. The RD signal of microstructure's boundary is mathematically deduced according to boundary condition and polarization optics theory. A normal-incidence RDM setup was built simply with one linear polarizer, one liquid crystal variable retarder and one 5 × objective. Then, the performance of the developed setup was identified using homogenous reflection mirror and high quality linear polarizer. For demonstration, microstructures array with 100 nm step height was measured. The results show that the RD signal is sensitive to the edge and its sign reflects the change direction of the edge. Furthermore, a height sensitivity of better than 10 nm and a spatial resolution of ∼3 μm offer this technique a good candidate for characterizing ultrathin microstructures.

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“…Two µ‐RD set‐ups has been reported in the literature. One is based on a charge‐coupled device (CCD) that is used as light detector 29 and the other is based on a laser and an XY translation stage 31–33. In the present work, we compare and discuss the performance of both set‐ups, by measuring the spatial distribution of strain in a GaSb(001) crystal.…”

Section: Introductionmentioning

confidence: 99%

Micro reflectance difference techniques: Optical probes for surface exploration

Lastras-Martı́nez

Pozo-Zamudio

Herrera‐Jasso

et al. 2012

Physica Status Solidi (b)

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Micro reflectance difference spectroscopy (m-RDS) is a promising tool for the in-situ and ex-situ characterization of semiconductors surfaces and interfaces. We discuss and compare two different approaches used to measure m-RD spectra. One is based on a charge-coupled device (CCD) camera, while the other uses a laser and a XY translation stage. To show the performance of these systems, we have measured surface optical anisotropies of GaSb(001) sample on which anisotropic strains have been generated by preferential mechanical polishing along [110] and ½110 directions. The spectrometers are complementary and the selection of one of them depends on the sample to be investigated and on experimental conditions.

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Microscopic Reflection Difference Spectroscopy on Semiconductor Nanostructures

Cited by 24 publications

References 15 publications

Interface-related in-plane optical anisotropy inGaAs/Alx
Chen
¹
,
Ye
²
,
Wang
³

et al. 2002
Phys. Rev. B
36
0
45
2
View full text Add to dashboard Cite

Interface-related in-plane optical anisotropy inGaAs/Alx
Chen
¹
,
Ye
²
,
Wang
³

et al. 2002
Phys. Rev. B
36
0
45
2
View full text Add to dashboard Cite

Reflectance difference microscopy for nanometre thickness microstructure measurements

Micro reflectance difference techniques: Optical probes for surface exploration

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Microscopic Reflection Difference Spectroscopy on Semiconductor Nanostructures

Cited by 24 publications

References 15 publications

Interface-related in-plane optical anisotropy inGaAs/AlxChen1, Ye2, Wang3 et al. 2002Phys. Rev. B360452View full textAdd to dashboardCite

Interface-related in-plane optical anisotropy inGaAs/AlxChen1, Ye2, Wang3 et al. 2002Phys. Rev. B360452View full textAdd to dashboardCite

Reflectance difference microscopy for nanometre thickness microstructure measurements

Micro reflectance difference techniques: Optical probes for surface exploration

Contact Info

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About

Interface-related in-plane optical anisotropy inGaAs/Alx
Chen
¹
,
Ye
²
,
Wang
³

et al. 2002
Phys. Rev. B
36
0
45
2
View full text Add to dashboard Cite

Interface-related in-plane optical anisotropy inGaAs/Alx
Chen
¹
,
Ye
²
,
Wang
³

et al. 2002
Phys. Rev. B
36
0
45
2
View full text Add to dashboard Cite