Microscopic origins of surface states on nitride surfaces

Walle, Chris G. Van de; Segev, David

doi:10.1063/1.2722731

Cited by 264 publications

(237 citation statements)

References 45 publications

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“…Thus, one is faced with the classical situation of a non-polar III-V semiconductor surface, where the bulk band gap is free of intrinsic surface states. This agrees well with theoretical calculations of the band structure of the InN(1010) surface [39], where the filled and empty surface states are located energetically within the valence and conduction band, respectively.…”

Section: B Electronic Propertiessupporting

confidence: 79%

Intrinsic electronic properties of high-quality wurtzite InN

et al. 2016

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Recent reports suggested that InN is a highly unusual III-V semiconductor, whose behavior fundamentally differs from that of others. We therefore analyzed its intrinsic electronic properties on the highest available quality InN layers, demonstrating the absence of electron accumulation at the (1010) cleavage surface and in the bulk. The bulk electron density is governed solely by dopants. Hence, we conclude that InN acts similarly to the other III-V semiconductors and previously reported intriguing effects are related to low crystallinity, surface decomposition, nonstoichiometry, and/or In adlayers.

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Section: B Electronic Propertiessupporting

confidence: 79%

Intrinsic electronic properties of high-quality wurtzite InN

et al. 2016

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“…The main significant difference is that no surface states are within the fundamental band gap [58,62,63]. The filled states are energetically located at the valence band maximum, whereas the empty states are well above the conduction band minimum ( Fig.…”

Section: Wurtzite Innmentioning

confidence: 99%

“…In contrast, both calculated empty states have stronger, but different, dispersions. The overall minimum is again at the Γ-point within the fundamental band gap [58,62]. No experimental data of the surface states of GaN(1120) is reported, yet.…”

Section: Wurtzite Ganmentioning

confidence: 99%

Non‐polar group‐III nitride semiconductor surfaces

Eisele

Ebert

2012

Physica Rapid Research Ltrs

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The intrinsic structural and electronic properties of a surface are important for any further study or application of the material, especially when a high surface‐to‐volume ratio is obtained or the surface gets functionalized, as e.g. during growth. Due to increasing material quality over recent years, the first experimental results are now available for the non‐polar group‐III nitride semiconductor surface, which can be compared with previously reported theoretical calculations. While the reports on AlN and InN surfaces are still small in number, for GaN quite a lot of experimental results on the non‐polar surfaces were published on the intrinsic geometric and electronic properties, the defects, the decomposition, and the effect of impurities. Furthermore, the growth on non‐polar group‐III nitride surfaces is a new concept to reduce undesirable piezoelectric polarization in heterostructures and the side walls of wurtzite‐structured nano‐wires are formed mostly by non‐polar facets. Hence, we review the existing intrinsic structural and electronic properties of non‐polar surfaces of group‐III nitride semiconductors in this contribution.magnified imageThe three different non‐polar surfaces of III–V semiconductors with filled (bright green) and empty (bright red) dangling bonds: left (red) the (10\bar 10) surface of the wurtzite crystal structure, middle (blue) the (11\bar 20) surface of the wurtzite crystal structure, and right (green) the ({110}) surface of the zincblende structure. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…[16][17][18] To date, however, the practical device applications of InN-based materials have been severely limited by the presence of extremely large residual electron density and the uncontrolled surface charge properties, as well as the difficulty in achieving p-type conductivity. 8,[19][20][21][22][23][24][25][26][27][28][29][30] For example, in general, the currently reported nominally undoped InN is n-type degenerate, with the residual electron densities in the range of ∼ 1 × 10 18 cm −3 , or higher. 8,11,25,[31][32][33][34] Moreover, it has been generally observed that there exists a very high electron concentration (∼ 1 × 10 13−14 cm −2 ) at both the polar and nonpolar grown surfaces of InN films, 19,35 and the Fermi-level (E F ) is pinned deep into the conduction band at the surfaces; 19,20,29,30 similar electron accumulation profile has also been measured at the lateral nonpolar grown surfaces of [0001]-oriented wurtzite InN nanowires.…”

mentioning

confidence: 99%

Understanding the role of Si doping on surface charge and optical properties: Photoluminescence study of intrinsic and Si-doped InN nanowires

Zhao

Kibria

et al. 2012

Phys. Rev. B

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In the present work, photoluminescence characteristics of intrinsic and Si-doped InN nanowires were studied in details. For intrinsic InN nanowires, the emission is due to band-to-band carrier recombination with the peak energy at ∼ 0.64 eV (at 300 K), and may involve free-exciton emission at low temperatures. The PL spectra exhibit a strong dependence on optical excitation power and temperature, which can be well characterized by the presence of very low residual electron density, and the absence or negligible level of surface electron accumulation. In comparison, the emission of Si-doped InN nanowires is characterized by the presence of two distinct peaks located at ∼ 0.65 eV and ∼ 0.73 − 0.75 eV (at 300 K). Detailed studies further suggest that these low-energy and highenergy peaks can be ascribed to band-to-band carrier recombination in the relatively low-doped nanowire bulk region and Mahan exciton emission in the high-doped nanowire near-surface region, respectively; this is a natural consequence of dopants surface segregation. The resulting surface electron accumulation and Fermi-level pinning, due to the enhanced surface doping, is confirmed by angle-resolved X-ray photoelectron spectroscopy measurements on Si-doped InN nanowires, which is in direct contrast to the absence, or negligible level of surface electron accumulation in intrinsic InN nanowires. This work has elucidated the role of charge carrier concentration and distribution on the optical properties of InN nanowires.

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Microscopic origins of surface states on nitride surfaces

Cited by 264 publications

References 45 publications

Intrinsic electronic properties of high-quality wurtzite InN

Intrinsic electronic properties of high-quality wurtzite InN

Non‐polar group‐III nitride semiconductor surfaces

Understanding the role of Si doping on surface charge and optical properties: Photoluminescence study of intrinsic and Si-doped InN nanowires

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