Microscopic origins of anisotropy for the epitaxial growth of 3C-SiC (0001) vicinal surface: A kinetic Monte Carlo study

Ai, Wensen; Chen, Xuejiang; Feng, Jianmei

doi:10.1063/5.0084669

Cited by 4 publications

(1 citation statement)

References 38 publications

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“…From our point of view, the most interesting is the analysis of the vicinal surface, which is the subject of several theoretical and experimental studies. − This type of surface is important in catalysis during the growth of nanostructures or engineering since steps are active sites for nucleation or chemical reactions. Many previous investigations have focused on the growth of crystals in different aspects, − step bunching or meandering. − In particular, the emergence of the step-bunching instability has been systematically studied .…”

Section: Introductionmentioning

confidence: 99%

Diffusion-Dependent Pattern Formation on Crystal Surfaces

Chabowska,

Załuska-Kotur

2023

ACS Omega

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The growth of a crystal is usually determined by its surface. Many factors influence the growth dynamics. Energy barriers associated with the presence of steps most often decide the emerging pattern. The height and type of Ehrlich−Schwoebel step barriers lead to the growth of nanocolumns, nanowires (NWs), pyramids, and bunches or meanders in the same system. Surface diffusion is another factor that determines the nature of growth. We used the (2 + 1)D cellular automaton model to investigate the additional effect of diffusion along with step barriers. We show that when we change only the diffusion rate, the length of the meanders or the height of the bunches increases, while the cracked structure of the nanopillars changes into very long, tall NWs. We show that the length of the step−step correlation is a good characterization of the resulting patterns.

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Section: Introductionmentioning

confidence: 99%

Diffusion-Dependent Pattern Formation on Crystal Surfaces

Chabowska,

Załuska-Kotur

2023

ACS Omega

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Size distribution of clusters and nucleation preference of trimers during SiC (0001) surface epitaxial growth under low coverage

Chen

2023

Journal of Vacuum Science &Amp; Technology A

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In order to better understand the microscopic nucleation behavior during the epitaxial growth of a SiC crystal, a lattice kinetic Monte Carlo model is developed, in which Si and C particles are set as the basic elements. The events list is built up to implement group search and binary search, which can improve the efficiency of the algorithm. In addition, the Hoshen–Kopelman algorithm is also used to calculate the statistics of the properties of clusters. Then, the cluster size distribution function and the nucleation preference of trimers are analyzed. The results show that the cluster size distribution function obeys the Gauss distribution, and the proportion of crystal nuclei close to the average size gradually increases. Moreover, the growth temperature mainly affects the trapping rate of adatoms by dimers, and the C/Si ratio affects the formation of different types of dimers and the concentration of adatoms.

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Microscopic study of submonolayer nucleation characteristics during GaN (0001) homoepitaxial growth

Su,

Ai,

Chen

et al. 2023

Journal of Vacuum Science &Amp; Technology A

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An on-lattice kinetic Monte Carlo model is constructed to investigate microscopic nucleation behavior during the submonolayer epitaxial growth of GaN islands, where the Ga and N atoms are treated as the basic particles. The input kinetic parameters of Ga and N, including their surface diffusion energy barriers, were obtained from previous ab initio calculations. Furthermore, a simple and effective bond counting rule is applied in our kinetic Monte Carlo model, and the statistics of the GaN islands on the surface are realized via the application of the Hoshen–Kopelman algorithm. The growth temperature range covers the typical growth temperatures used in the molecular beam epitaxy of GaN. The results obtained show that triangular GaN flakes are observed and that the shapes of the GaN islands remain triangular when the growth temperature is changed. Additionally, the power law for the maximum density of islands versus the ratio of the effective diffusion to the deposition rate is obtained; the exponent of this law is −0.506 ± 0.006, indicating that these triplets represent the seeds required for further nucleation. Finally, the coexistence of the Ga-edge and N-edge types of triangular GaN islands is observed. The island formation mechanism is attributed to a local monomer density misbalance, and it is also shown that a slight variation in the Ga/N ratio in the deposition flux changes the proportion of the Ga-edge and N-edge type triangles; this represents a further indication that controllable GaN morphologies can be obtained by tuning the chemical potentials of the constituent elements.

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Microscopic origins of anisotropy for the epitaxial growth of 3C-SiC (0001) vicinal surface: A kinetic Monte Carlo study

Cited by 4 publications

References 38 publications

Diffusion-Dependent Pattern Formation on Crystal Surfaces

Diffusion-Dependent Pattern Formation on Crystal Surfaces

Size distribution of clusters and nucleation preference of trimers during SiC (0001) surface epitaxial growth under low coverage

Microscopic study of submonolayer nucleation characteristics during GaN (0001) homoepitaxial growth

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