Microscopic origin of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-type behavior in Si-doped AlN

Hevia, Daniel Fernández; Stampfl, Catherine; Viñes, Francesc; Illas, Francesc

doi:10.1103/physrevb.88.085202

Cited by 23 publications

(24 citation statements)

References 33 publications

(55 reference statements)

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“…A more recent calculation predicted no DX-like behavior for Si in AlN and suggested that the n-type conductivity in AlN is caused by the cluster of four Si and an Al vacancy, V Al -4Si, which is predicted to have a formation energy lower than that of the substitutional Si Al donor. 12 In a Raman spectroscopy study of GaN:Si under hydrostatic pressure, where the results can be transferred to Al x Ga 1Àx N, no DX behavior was detected for x up to $0.56. 13 A later transport study 14 suggested Si to be a DX center in Al x Ga 1Àx N for x !…”

Section: Stable and Metastable Si Negative-u Centers In Algan And Alnmentioning

confidence: 99%

Stable and metastable Si negative-U centers in AlGaN and AlN

Trinh

Nilsson

Ivanov

et al. 2014

Applied Physics Letters

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Electron paramagnetic resonance studies of Si-doped AlxGa1−xN (0.79 ≤ x ≤ 1.0) reveal two Si negative-U (or DX) centers, which can be separately observed for x ≥ 0.84. We found that for the stable DX center, the energy |EDX| of the negatively charged state DX−, which is also considered as the donor activation energy, abruptly increases with Al content for x ∼ 0.83–1.0 approaching ∼240 meV in AlN, whereas EDX remains to be close to the neutral charge state Ed for the metastable DX center (∼11 meV below Ed in AlN).

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Section: Stable and Metastable Si Negative-u Centers In Algan And Alnmentioning

confidence: 99%

Stable and metastable Si negative-U centers in AlGaN and AlN

Trinh

Nilsson

Ivanov

et al. 2014

Applied Physics Letters

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“…22 The deep acceptor is most likely a triply charged cation vacancy (V III ) 3À . 6,21 The appearance of the deep acceptor and the increase in resistivity from sample B to sample C, despite an increase in the Si concentration, indicate that for the highest SiH 4 flux the sample is in the selfcompensating regime.…”

mentioning

confidence: 99%

“…Alternatively, oxygen on an interstitial site (O À i ) would act as a singly charged acceptor. 21 The low energy impurity transition at either 3.39 eV or 3.36 eV is attributed to recombination between a shallow donor (Si) and a doubly charged deep level acceptor. The doubly charged deep level acceptor is most likely an acceptor complex (V III -O N ) 2À .…”

mentioning

confidence: 99%

Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N

Kusch

Nouf-Allehiani

Mehnke

et al. 2015

Applied Physics Letters

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A series of Si-doped AlN-rich AlGaN layers with low resistivities was characterized by a combination of nanoscale imaging techniques. Utilizing the capability of scanning electron microscopy to reliably investigate the same sample area with different techniques, it was possible to determine the effect of doping concentration, defect distribution, and morphology on the luminescence properties of these layers. Cathodoluminescence shows that the dominant defect luminescence depends on the Si-doping concentration. For lower doped samples, the most intense peak was centered between 3.36 eV and 3.39 eV, while an additional, stronger peak appears at 3 eV for the highest doped sample. These peaks were attributed to the (VIII-ON)2− complex and the VIII3− vacancy, respectively. Multimode imaging using cathodoluminescence, secondary electrons, electron channeling contrast, and atomic force microscopy demonstrates that the luminescence intensity of these peaks is not homogeneously distributed but shows a strong dependence on the topography and on the distribution of screw dislocations.

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“…photoelectron spectroscopy (XPS) investigation has confirmed that Si exist as Si 4+ and Al exist as Al 3+ in these examined thin films. Substituting Al 3+ with Si 4+ will consequently generate point defects (Si Al and aluminum vacancy (V Al ′)) to maintain charge neutrality 29 . In order to confirm the presence of point defects, several thin films were subjected to Raman measurements and the results are presented in Fig.…”

Section: Elucidation On Mechanism Of Polarity Inversion -Effect Of Simentioning

confidence: 99%

“…The excess of Mg will form Mg x Al 1−x N as well as V N and their coexistence has been proven to result in thin film with Al-polarity 39 . Meanwhile, the presence of smaller amount of N-polar components is believed to correspond with the existence of Si x Al 1−x N as a product from the excess of Si, whose formation could induce defect cluster of [V Al + nSi Al ] 29 that lead to polarity inversion. Since the excess of Si exist in smaller amount, the polarity inversion also occurs locally.…”

Section: Effect Of Mgsi Addition On Polarity Inversion Incorporatingmentioning

confidence: 99%

Polarity Inversion of Aluminum Nitride Thin Films by using Si and MgSi Dopants

Anggraini

Uehara

Hirata

et al. 2020

Sci Rep

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polarity is among the critical characteristics that could governs the functionality of piezoelectric materials. In this study, the polarity of aluminum nitride (AlN) thin films was inverted from Al-polar to N-polar by doping Si into AlN in the range of 1-15 at.%. Polarity inversion from Al-polar to N-polar also occurred when MgSi was codoped into AlN with Mg to Si ratio was less than 1. However, the polarity can be reversed from N-polar to Al-polar when the ratio of Mg and Si was greater than 1. The effect of Si and MgSi addition was investigated with regards to their crystal structure, lattice parameters, polarity distribution and the oxidation state of each elements. Furthermore, the effect of intermediate layer as well as the presence of point defect (i.e. aluminum vacancy) were investigated and how these factors influence the polarity of the thin films are discussed in this report.Wurtzite structure aluminum nitride (AlN) is one of the important building blocks for various advanced electromechanical and optoelectronics devices. AlN has been touted as a promising material for radio frequency (RF) acoustic devices such as resonators, due to its high acoustic velocity, high quality (Q) factor, thermal stability and the compatibility with CMOS technology 1 . With the ever-growing market of wireless telecommunication devices, the need to continuously enhance the piezoelectric property of AlN has made it the subject of extensive study and research.Improving the piezoelectric properties of AlN can be done by either augmenting the magnitude of piezoelectric response along c-axis (d 33 ) or by controlling the polarity of the thin film. Since the non-centrosymmetry of wurtzite AlN is the origin of polarization along the c-axis, a highly c-oriented AlN thin film could exhibits either Al-or N-polarity 2 . While considerable efforts have been devoted to find the best dopants that could produce the highest enhancement in the piezoelectric response 3-5 , manipulating the polarity of AlN is equally essential in designing high performance devices, since having thin film with different polarity could lead to different electronic property and eventually alter the performance of the developed device 2,6-8 . For example, having a stack of N-polar layer on top of an Al-polar layer enabled a solidly mounted resonator BAW (SMR-BAW) to operate at higher frequency which made it capable to function in more advance telecommunication technology 2,6 .When it comes to controlling the polarity, there are numbers of efforts that have been reported to successfully switch the polarity of nitride thin films from metal-polar into N-polar or vice versa 1,8-12 . The insertion of a buffer layer or an intermediate layer is one of the common approaches that was utilized to inverse the polarity [8][9][10]13,14 . Aside from this, switching the polarity can also be done by altering the thin film deposition parameters (e.g. pressure or target power), inserting metal seed or by introducing oxygen during thin film deposition 12,15-17 . However, these metho...

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Microscopic origin ofn-type behavior in Si-doped AlN

Cited by 23 publications

References 33 publications

Stable and metastable Si negative-U centers in AlGaN and AlN

Stable and metastable Si negative-U centers in AlGaN and AlN

Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N

Polarity Inversion of Aluminum Nitride Thin Films by using Si and MgSi Dopants

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