By applying a high pulsed voltage to a gap between two electrodes placed in a solution, an atmosphericpressure in-solution glow (ASG) plasma is generated. The ASG plasma is applied in a new material processing method, called solution plasma processing (SPP). In order to accelerate the reaction and to add functions to the synthesized materials, it is important to alter the gas content in the ASG plasma. We developed a direct gas injection system for an ASG discharge cell. When O 2 , CO 2 , N 2 and Ar gases were injected into the ASG plasma, emission bands due to the derivatives of the injected gases were observed in the emission spectra from the ASG plasma. The electron number density in the ASG plasma was increased by the O 2 , CO 2 , and N 2 injections, probably due to the enhancements of the a and g processes by the larger molecular weights than H 2 O. In addition, the first dielectric breakdown of the solution and the formation of the gas bubble processes gradually disappeared due to the gas injection.When O 2 was injected, the amount of $OH generation was increased. By the enhancement of the $OH generation, the degradation speed of rhodamine B in the ASG plasma was increased by a factor of two. When Au nanoparticles were synthesized utilizing the ASG plasma, the zeta potential of the Au nanoparticles was increased by about 30% by the O 2 injection. The plasma parameters and the reactivity of the ASG plasma can be altered more widely by changing the kind of injected gas and the flow rate.