Vertical-Cavity Surface-Emitting Lasers XXV 2021
DOI: 10.1117/12.2583234
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Microscopic charge carrier dynamics within non-normal incidence VECSEL cavities

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“…The absorbing power is thus calculated from the substrate, the imaginary part of the dielectric constant. When the structure is fully absorbed, there are numerous electrons stored in the conduction band and holes in the balanced band that results in ionization are Fermidistributions at room temperature [22], [39]. The calculation of the rate performance of the entire absorber device is considering in the following expression, where all in incidence radiation is absorbed without reflection, outside distributed radiations bend and recenter into the structure.…”
Section: A the Incident Energy And Power Dissipationmentioning
confidence: 99%
“…The absorbing power is thus calculated from the substrate, the imaginary part of the dielectric constant. When the structure is fully absorbed, there are numerous electrons stored in the conduction band and holes in the balanced band that results in ionization are Fermidistributions at room temperature [22], [39]. The calculation of the rate performance of the entire absorber device is considering in the following expression, where all in incidence radiation is absorbed without reflection, outside distributed radiations bend and recenter into the structure.…”
Section: A the Incident Energy And Power Dissipationmentioning
confidence: 99%