2009
DOI: 10.1002/pssc.200880309
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Microscopic analysis of high‐harmonic generation in semiconductor nanostructures

Abstract: A microscopic analysis of the emitted radiation of a semiconductor nanostructure after excitation with an extremely intense ultrashort laser pulse is presented. It is shown that the extreme nonlinear optical response is not sufficiently described by pure interband transitions but one has to include intraband effects as well.Numerical solutions of extended Bloch equations that include the coupled inter‐ and intraband dynamics are presented. For large excitation intensities, the intraband effects strongly modify… Show more

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Cited by 15 publications
(18 citation statements)
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References 20 publications
(21 reference statements)
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“…Therefore, intraband effects strongly modulate the polarization dynamics. As long as inter and intraband transitions are properly considered in the microscopic calculations, polarization and current sources together produce strongly enhanced emission intensity compared to an artificial case where only polarization dynamics is allowed and the gradient terms are omitted . While Ref.…”
Section: Microscopic Theory Of Strong‐field Excitations In Semiconducmentioning
confidence: 99%
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“…Therefore, intraband effects strongly modulate the polarization dynamics. As long as inter and intraband transitions are properly considered in the microscopic calculations, polarization and current sources together produce strongly enhanced emission intensity compared to an artificial case where only polarization dynamics is allowed and the gradient terms are omitted . While Ref.…”
Section: Microscopic Theory Of Strong‐field Excitations In Semiconducmentioning
confidence: 99%
“…For a fully consistent description, one needs quantum‐mechanical models such as the SBE, the solution of the time dependent many‐body Schrödinger equation, or a density matrix approach in order to properly capture the interplay between intra‐ and interband excitations in two bands and multi‐band models . Also Refs.…”
Section: Microscopic Theory Of Strong‐field Excitations In Semiconducmentioning
confidence: 99%
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“…In the case of solids, electrons are promoted to discrete conduction bands, where they do not evolve freely. This leads, for instance, to a different linear field dependence for the cutoff energy [6], different time-frequency characteristics of the harmonic emission between atoms and solids [8,11,16], and a different ellipticity dependence [6,17].Historically, HHG in solids was first discussed in terms of Bloch oscillations (i.e., pure intraband dynamics) [18][19][20], and more recently mainly analyzed using simplified models based on numerical solutions of the semiconductor Bloch equations [21][22][23] treating the complex, coupled interband and intraband dynamics, with the exception of the ab initio simulations of Ref. [24].…”
mentioning
confidence: 99%
“…Historically, HHG in solids was first discussed in terms of Bloch oscillations (i.e., pure intraband dynamics) [18][19][20], and more recently mainly analyzed using simplified models based on numerical solutions of the semiconductor Bloch equations [21][22][23] treating the complex, coupled interband and intraband dynamics, with the exception of the ab initio simulations of Ref. [24].…”
mentioning
confidence: 99%