Microscopic analysis of alpha scattering fromSi28at 40 and 45 MeV

Abstract

Angular distributions for the elastic and inelastic alpha scattering from Si at E =40 and 45 MeV are analyzed in the framework of microscopic folding model. Transition densities are calculated from improved s-d shell-mode1 wave functions and are also compared with those extracted from inelastic electron scattering data. The density-dependent Jeukenne-Lejeune-Mahaux interaction is used, besides the M3Y interaction, in an attempt to 6t the large-angle data. Fairly good agreement with the data is obtained. The extracted M"/M~value for the 2+ excited state of Si also compares well with the shellmodel prediction.PACS number(s): 25.55.Ci

Fibonacci superlattices of narrow-gap III-V semiconductors

“…Keeping this difference in mind, one can proceed in analogy with the relativistic treatment. Transport properties of the SL at zero temperature are discussed in the context of transmission coefficient and the Landauer resistance [20,21] and related to the possible critical nature of the electronic states. Spatial extension of the envelope-functions is determined by means of the Lyapunov coefficient, which is nothing but the inverse of the localization length.…”