Microreflectivity studies of wavelength control in oxidised AlGaAs microcavities

Macaluso, Roberto; Robert, F.; Bryce, A.C.; Calvez, S.; Dawson, Martin D.

doi:10.1016/s0921-5107(02)00645-1

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“…The bottom mirror consists of a 10 pair Al 0.9 Ga 0. [9] as verified by our previous measurements on oxidized Bragg mirror [10]. The maximum shift expected from the modelling was 68 nm, for an oxide thickness of 226 nm.…”

Section: Passive Structuresupporting

confidence: 86%

Resonant wavelength control of a 1.3 m microcavity by intracavity steam oxidation

Macaluso

Robert

Bryce

et al. 2002

Semicond. Sci. Technol.

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We report a multi-wavelength passive filter working in the 1.3 µm range, fabricated by a post-growth technique based on the combined lateral-vertical steam oxidation of AlGaAs layers within a microcavity. Wafers are photolithographically patterned and etched through the top to create mesa structures which are oxidized from both edges, and control of resonant wavelength is achieved through mesa width, thickness and compositional control of intracavity layers to be oxidized, and oxidation conditions. Microreflectivity measurements of the processed devices show that in this wavelength range it is possible using this approach to control the resonant wavelength over a range of about 52 nm.

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Section: Passive Structuresupporting

confidence: 86%