Micromechanical electrostatic K-band switches

Pacheco, Sergio; Nguyen, C.T.-C.; Katehi, L.P.B.

doi:10.1109/mwsym.1998.700675

Cited by 97 publications

(42 citation statements)

References 6 publications

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“…Figure 12 presents the cross-sectional schematic of a typical single-pole single-throw micromechanical switch. Such switches are now developed by several US industries [45][46][47][48][49][50]. As shown, the switch of Fig.…”

Section: Micromechanical Switchesmentioning

confidence: 99%

“…because their very low insertion loss (which eliminates the need for loss-recovering power amplifiers) and near-zero DC power consumption (which allows substantial power savings). Research on micromechanical switches continues, and new versions with all of the above advantages, but with much smaller actuation voltage requirements and much faster response times, are presently under investigation [50].…”

Section: Micromechanical Switchesmentioning

confidence: 99%

“…Specifically, the high-Q RF and IF filters, oscillators, and couplers, currently implemented via off-chip resonators and discrete passives may now potentially be realized on the micro-scale using micromachined equivalents based on a variety of novel devices, including high-Q on-chip mechanical resonators [9][10][11], voltage-tunable on-chip capacitors [12], isolated low-loss inductors [13][14][15][16]34], microwave/mm-wave high-Q filters [35][36][37][38][39][40], structures for high frequency isolation packaging [43][44], and low loss micromechanical switches [45][46][47][48][49][50]. Once these miniaturized filters and oscillators become available, the fundamental bases upon which communication systems are developed may also evolve, giving rise to new system architectures with possible power and bandwidth efficiency advantages.…”

Section: Introductionmentioning

confidence: 99%

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Micromachined devices for wireless communications

1998

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Abstract-An overview of recent progress in the research and development of micromachined devices for use in wireless communication sub-systems is presented. Among the specific devices described are tunable micromachined capacitors, integrated high-Q inductors, micromachined low-loss microwave and mm-wave filters, low loss micromechanical switches, microscale vibrating mechanical resonators with Q's in the tens of thousands, and miniature antennas for mm-wave applications. Specific applications are reviewed for each of these components with emphasis on methods for miniaturization and performance enhancement of existing and future wireless transceivers.

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Section: Micromechanical Switchesmentioning

confidence: 99%

Section: Micromechanical Switchesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Micromachined devices for wireless communications

1998

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“…Indeed, compared to traditional siliconbased fabrication process, III-V technology offers a practical way to integrate RF switches with other electronic and photonic devices on GaAs, GaN/Si or GaN/SiC substrates [1]. Among the others, K-band wireless terrestrial and space-oriented applications are making appealing the integration of RF MEMS switches with electronic circuitry, taking advantage of the high wide-band linearity, low insertion loss and power consumption, small volume and low batch fabrication cost peculiar of micromachined devices [2].…”

Section: Introductionmentioning

confidence: 99%

K-band capacitive MEMS switches on GaAs substrate: Design, fabrication, and reliability

Persano

Tazzoli

Farinelli

et al. 2012

Microelectronics Reliability

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“…Many ripened shunt and series designs are previously discussed [1][2][3] and [4][5][6]. But the switches are not limited to these two types (series and shunt).…”

Section: Introductionmentioning

confidence: 99%

A Disparate Low Loss DC to 90 GHz Wideband Series Switch

Gogna¹,

Jha²,

Gaba³

et al. 2016

Transactions on Electrical and Electronic Materials

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This paper presents design and simulation of wide band RF microswitch that uses electrostatic actuation for its operation. RF MEMS devices exhibit superior high frequency performance in comparison to conventional devices. Similar techniques that are used in Very Large Scale Integration (VLSI) can be employed to design and fabricate MEMS devices and traditional batch-processing methods can be used for its manufacturing. The proposed switch presents a novel design approach to handle reliability concerns in MEMS switches like dielectric charging effect, micro welding and stiction. The shape has been optimized at actuation voltage of 14-16 V. The switch has an improved restoring force of 20.8 μN. The design of the proposed switch is very elemental and primarily composed of electrostatic actuator, a bridge membrane and coplanar waveguide which are suspended over the substrate. The simple design of the switch makes it easy for fabrication. Typical insertion and isolation of the switch at 1 GHz is -0.03 dB and -71 dB and at 85 GHz it is -0.24 dB and -29.8 dB respectively. The isolation remains more than -20 db even after 120 GHz. To our knowledge this is the first demonstration of a metal contact switch that shows such a high and sustained isolation and performance at W-band frequencies with an excellent figure-of merit (fc=1/2.pi.Ron.Cu =1,900 GHz). This figure of merit is significantly greater than electronic switching devices. The switch would find extensive application in wideband operations and areas where reliability is a major concern.

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Micromechanical electrostatic K-band switches

Cited by 97 publications

References 6 publications

Micromachined devices for wireless communications

Micromachined devices for wireless communications

K-band capacitive MEMS switches on GaAs substrate: Design, fabrication, and reliability

A Disparate Low Loss DC to 90 GHz Wideband Series Switch

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