1998
DOI: 10.1016/s0921-5107(97)00271-7
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Micromachining and mechanical properties of GaInAs/InP microcantilevers

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Cited by 18 publications
(7 citation statements)
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“…2(d)). Next, with the help of photolithography and a hydrochloric acid (HCl) based wet-etching solution, we remove a substantial amount of InP substrate below InGaAsP [22][23][24]. In step e, the areas to be wet-etched are opened in the negative-tone NR9-1500PY photoresist spun at 3500 rpm for 40 s to yield a thickness of 1.5 μm.…”
Section: Device Famentioning
confidence: 99%
“…2(d)). Next, with the help of photolithography and a hydrochloric acid (HCl) based wet-etching solution, we remove a substantial amount of InP substrate below InGaAsP [22][23][24]. In step e, the areas to be wet-etched are opened in the negative-tone NR9-1500PY photoresist spun at 3500 rpm for 40 s to yield a thickness of 1.5 μm.…”
Section: Device Famentioning
confidence: 99%
“…In order to obtain the hardness and Young's moduli of the specimens experimentally, a nanoindentation method utilizing a Vickers diamond indenter was used at room temperature [16][17][18]. Each side of a sample was polished to yield a mirror face using diamond pastes.…”
Section: Nanoindentation Testmentioning
confidence: 99%
“…HCl etches the InP layer at a much faster rate than it does the active waveguide layer ͓composed of lower phosphorous ͑P͒ percentage alloys of InAsP and InGaAsP compounds͔, providing the necessary degree of etch selectivity. 15 The resolution and selectivity of the etch are improved by cooling the solution in an ice-water bath to ϳ4°C, thereby reducing the material etch rates and, in particular, the total amount of waveguide material that is necessarily etched. The typical time to fully undercut the membrane was ϳ12 min ͑depending on the lattice spacing and hole size of the PC pattern͒.…”
Section: B Inaspõingaasp Membrane Etch and Undercutmentioning
confidence: 99%