Microgun-pumped blue lasers

Abstract

Microgun-pumped lasers, in which electron beam pumping is achieved via an array of low-voltage, field-emission microtips, were demonstrated in the blue and blue-green regions of the spectrum. The devices exploit graded index, separate confinement Zn1−xCdxSe/ZnSe heterostructures grown by molecular beam epitaxy on In1−xGaxAs(100) substrates. Lasing thresholds were in the 4–20 kW/cm2 range for temperatures between 83 and 225 K, and the device lifetime exceed several hours at a 12.5% duty cycle for a laser operating at 83 K and a wavelength of 478.4 nm.

Effective Green Semiconductor Lasers with Multiple CdSe/ZnSe QD Active Region for Electron Beam Pumping

“…During the last decades several successful attempts in fabrication of quantum-sized ZnSe-based EBP lasers were demonstrated [1]. Using of lowdimensional heterostructures with short-period superlattice (SL) waveguide and single CdSe/ZnSe quantum dot (QD) active region resulted in room-temperature lasing at E e < 5 keV with the extremely low threshold current density j th = 0.4-0.5 A/cm 2 (E e = 8-10 keV) [2].…”

High‐efficiency electron‐beam pumped green semiconductor lasers based on multiple CdSe quantum disk sheets

“…Sufficient progress in the development of EBP lasers has been achieved using semiconductor heterostructures as the laser active elements instead of bulk materials. The lasing with microgun excitation both in infrared at RT and in blue-green spectral region at cryogenic temperatures have been demonstrated [4,5]. Fabrication of EBP blue-green RT lasers based on alternately-strained superlattice waveguide with the value of threshold current density as low as 0.8 A/cm2 and pulse output power as high as 9 W has been recently reported [6,7].…”

Green electron‐beam pumped laser arrays based on II–VI nanostructures

“…We have used a homemade electron gun with the maximum total current of an electron beam as high as 600 mA at the electron energy below 26 keV. In contrast to our previous studies [1,2], this gun enables one to pump the laser array of several …”

“…1 Introduction Electron-beam pumped (EBP) green semiconductor lasers based on undoped II-VI-based structures can be used for numerous applications, such as projection television, optical navigation, location systems, medicine, etc. Sufficient progress in the development of EBP lasers has been achieved using semiconductor heterostructures as the laser active elements instead of bulk materials [1]. The minimum value of the room temperature (RT) threshold current density in electron beam, achieved in a transverse pumping geometry for ZnSe-based separate confinement heterostructure lasers with the active region based on single CdSe quantum dot (QD) sheets, has been recently reported to be as low as 0.4-0.5 A/cm 2 at the electron energy of 8-9 keV [2].…”