Microfabrication Techniques

Leitão, Diana C.; Amaral, Joana D.; Freitas, P. P.; Reig, C.

doi:10.1007/978-3-642-37172-1_2

Cited by 4 publications

(1 citation statement)

References 31 publications

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“…The thickness of the resulting layer is monitored during the process, making it easy to adjust the sputtering length to the desired layer thickness. Permalloy NiFe was used as ferromagnetic material, while copper Cu was used as non-magnetic material [14]. A permanent magnetic field of neodymium magnets was applied along the long edge of each sample during the sputtering of ferromagnetic layers near the substrate [11,22].…”

Section: Technology Of Thin-film Gmr Structuresmentioning

confidence: 99%

GIANT MAGNETORESISTANCE OBSERVED IN THIN FILM NiFe/Cu/NiFe STRUCTURES

Kisała

Kociubiński²,

Czarnacka³

et al. 2022

IAPGOS

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In this paper, the technology for fabricating NiFe/Cu/NiFe layered structures by magnetron sputtering is presented. Two series of samples were fabricated on a glass substrate with a layered structure, where the individual layers were 30 nm NiFe, 5 nm Cu, and finally NiFe with a thickness of 30 nm. The series differed in the type of technology mask used. A constant magnetic field was applied to the substrate during the sputtering of the ferromagnetic layers. Measurements of the DC resistance of the obtained structures in the constant magnetic field of neodymium magnet packs with a constant magnetic field of about 0.5 T magnetic induction have been carried out. Comparison of the two series allows us to conclude the greater validity of using masks in the form of Kapton tape. The obtained results seem to confirm the occurrence of phenomena referred to as the giant magnetoresistance effect.

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Section: Technology Of Thin-film Gmr Structuresmentioning

confidence: 99%

GIANT MAGNETORESISTANCE OBSERVED IN THIN FILM NiFe/Cu/NiFe STRUCTURES

Kisała

Kociubiński²,

Czarnacka³

et al. 2022

IAPGOS

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Giant Magnetoresistance (GMR) Magnetometers

Reig

Cubells-Beltrán

2016

Smart Sensors, Measurement and Instrumentation

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A novel CMOS transducer for giant magnetoresistance sensors

Luong

Yang

et al. 2017

Review of Scientific Instruments

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In this work, an ASIC (application specific integrated circuits) transducer circuit for field modulated giant magnetoresistance (GMR) sensors was designed and fabricated using a 0.18-μm CMOS process. The transducer circuits consist of a frequency divider, a digital phase shifter, an instrument amplifier, and an analog mixer. These comprise a mix of analog and digital circuit techniques. The compact chip size of 1.5 mm × 1.5 mm for both analog and digital parts was achieved using the TSMC18 1P6M (1-polysilicon 6-metal) process design kit, and the characteristics of the system were simulated using an HSpice simulator. The output of the transducer circuit is the result of the first harmonic detection, which resolves the modulated field using a phase sensitive detection (PSD) technique and is proportional to the measured magnetic field. When the dual-bridge GMR sensor is driven by the transducer circuit with a current of 10 mA at 10 kHz, the observed sensitivity of the field sensor is 10.2 mV/V/Oe and the nonlinearity error was 3% in the linear range of ±1 Oe. The performance of the system was also verified by rotating the sensor system horizontally in earth's magnetic field and recording the sinusoidal output with respect to the azimuth angle, which exhibits an error of less than ±0.04 Oe. These results prove that the ASIC transducer is suitable for driving the AC field modulated GMR sensors applied to geomagnetic measurement.

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Microfabrication Techniques

Cited by 4 publications

References 31 publications

GIANT MAGNETORESISTANCE OBSERVED IN THIN FILM NiFe/Cu/NiFe STRUCTURES

GIANT MAGNETORESISTANCE OBSERVED IN THIN FILM NiFe/Cu/NiFe STRUCTURES

Giant Magnetoresistance (GMR) Magnetometers

A novel CMOS transducer for giant magnetoresistance sensors

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